Related papers: Microcontroller Based Portable Measurement System …
We report microwave impedance measurements of a superconductor-semiconductor hybrid nanowire device with three terminals (3T). Our technique makes use of transmission line resonators to acquire the nine complex scattering matrix parameters…
Superconducting transitions are driven by thermal fluctuations close to the transition temperature, Tc. These fluctuations are averaged out in global measurements, leaving imprints on susceptibility and resistance measurements. Here, we use…
The way of reduction of metal oxyde semiconductor (MOS) structures is going to reach limitations and new devices have to be explored as an alternative to MOS technology. Molecular electronic and more particularly self-assembly-molecular…
The nanoscale charge environment critically influences semiconductor physics and device performance. While conventional bulk characterization techniques provide volume-averaged defect properties, they lack the spatial resolution to resolve…
The global electronic properties of solid-state devices are strongly affected by the microscopic spatial paths of charge carriers. Visualising these paths in novel devices produced by scalable processes would provide a quality assessment…
Supercontinuum generation using chip-integrated photonic waveguides is a powerful approach for spectrally broadening pulsed laser sources with very low pulse energies and compact form factors. When pumped with a mode-locked laser frequency…
Multimode silicon photonics, leveraging mode-division multiplexing technologies, offers significant potential to increase capacity of large-scale multiprocessing systems for on-chip optical interconnects. These technologies have…
We summarize the R&D activities on a novel semitransparent microstrip sensor to be used on laser-based alignment systems for silicon trackers. The new sensor is used both for particle tracking and laser detection. The aim of this research…
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…
Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G…
Tunable, low-loss, narrowband, and frequency-stabilized filters play a critical role in the realization of transceivers for efficient signal processing in telecommunications and sensing applications in the presence of strong interference…
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN…
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high…
Devices based on photonic integrated circuits play a crucial role in the development of low-cost, high-performance, industry-scale manufacturable sensors. We report the design, fabrication, and application of a silicon nitride…
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs…
The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the…
An AC susceptometer operating in the range of 10 Hz to 100 kHz and at room temperature is designed, built, calibrated and used to characterize the magnetic behaviour of coated magnetic nanoparticles. Other weakly magnetic materials (in…
We fabricate and characterize waveguides composed of closely spaced and longitudinally oriented silicon ridges etched into silicon-on-insulator wafers. Through both guided mode and bulk measurements, we demonstrate that the patterning of…
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological…