Related papers: Microcontroller Based Portable Measurement System …
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
This paper proposes a DC microgrid state estimation and sensor placement method based on compressive sensing. Formulations of various types of measurements and components are developed under the proposed framework. A measurement placing…
First prototypes of large area, p-n junction, silicon carbide (SiC) detectors have been produced as part of an ongoing programme to develop a new particle identification wall for the focal plane detector of the MAGNEX magnetic spectrometer,…
Semiconductor devices favor high carrier mobility for reduced Joule heating and high thermal conductivity for rapid heat dissipation. The ability to accurately characterize the motion of charge carriers and heat carriers is necessary to…
Material research is a key frontier in advancing superconducting qubit and circuit performance. In this work, we develop a simple and broadly applicable framework for accurately characterizing two-level system (TLS) loss using internal…
A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and…
The effect of electrostatic gating on metallic elemental superconductors was recently demonstrated in terms of modulation of the switching current and control of the current phase relation in superconducting quantum interferometers. The…
The loss of amorphous hydrogenated silicon nitride (a-SiN$_{x}$:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system (TLS)…
Superconducting resonators with high quality factors are extremely sensitive detectors of the complex impedance of materials and devices coupled to them. This capability has been used to measure losses in multiple different materials and,…
For modern Gas sensors, high sensitivity and low power are expected. This paper discusses design, simulation and fabrication of new Micromachined Thermal Converters (MTCs) based on GaAs developed for Gas sensors. Metal oxide gas sensors…
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…
We present the electro-thermal characterization of transition-edge sensor (TES) detectors suspended on Si membranes fabricated using a silicon-on-insulator (SOI) wafer. The use of an all-silicon fabrication platform, in contrast to the more…
Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…
We present a simple measurement and analysis technique to determine the fraction of optical loss due to both radiation (scattering) and linear absorption in microphotonic components. The method is generally applicable to optical materials…
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses…
Graphene nanoribbons (GNRs) are atomically precise stripes of graphene with tunable electronic properties, making them promising for room-temperature switching applications like field-effect transistors (FETs). However, challenges persist…
A sensor that integrates high sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer was fabricated…
We design carbyne transistor which is integrable into the existing silicon technology and can be scaled up in a rather broad range -- starting from that prepared by us (by 0.5-mkm technology) up to the monomolecular one because the key…
Semiconductor components based on silicon carbide (SiC) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields, which is typically described by modeling and simulations…
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are…