Related papers: Native defect association in beta-Ga2O3 enables ro…
Lead-free dielectric thin-film capacitors with desirable energy storage density are gathering attention due to the increasing environmental concern and the integrating electronic devices. We here reported a series of new highly-orientated…
Gallium oxide (Ga$_2$O$_3$) has attracted significant interest for its unique potential especially in power electronics. However, its low and anisotropic thermal conductivity poses a major challenge for heat dissipation. Here, we explore an…
The electrical resistivity of conventional metals, such as copper, is known to increase in thin films due to electron-surface scattering, limiting the performance of metals in nanoscale electronics. Here, we find an unusual reduction of…
We report the fabrication of high Tc superconducting wires by photodoping a GdBa2Cu3O{6.5} thin film. An optical near-field probe was used to locally excite carriers in the system at room temperature. Trapping of the photogenerated…
Recent observations of superconducting like transition at 286 K in Ag and Ag nanostructures by Thapa et al. (arxiv: 1807.08572) have rekindled the hope for room temperature superconductivity under ambient conditions. We also investigated…
Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its…
Variable temperature scanning tunneling microscopy/spectroscopy studies on (110) oriented epitaxial thin films of La$_{0.350}$Pr$_{0.275}$Ca$_{0.375}$MnO$_3$ are reported in the temperature range of 77 to 340 K. The films, grown on lattice…
We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on…
The ohmic conductivity of the sol-gel derived Pb1+y(Zr0.3Ti0.7)O3 thin films (with the excess lead y=0.0 to 0.4) are investigated using low frequency small signal alternate current (AC) and direct current (DC) methods. Its temperature…
We report the growth of high-quality c-axis-oriented epitaxial MgB2 thin films by using a pulsed laser deposition technique. The thin films grown on (1`1 0 2) Al2O3 substrates show a Tc of 39 K. The critical current density in zero field is…
Hematite Fe$_2$O$_3$ seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide (ITO) thin films by room temperature magnetron sputtering. Conductivities of up to $\sigma = 3300\,{\rm…
We have studied the low-temperature electrical transport properties of Pb$_x$(SiO$_2$)$_{1-x}$ ($x$ being the Pb volume fraction) nanogranular films with thicknesses of $\sim$1000 nm and $x$ spanning the dielectric, transitional, and…
The epitaxial growth of technically-important $\beta$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching…
We report on the influence of the chemical composition on the electronic properties of molybdenum oxynitrides thin films grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90 %,…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…
The thermal conductivities of beta-Ga2O3 single crystals along four different crystal directions were measured in the temperature range of 80-495K using the time domain thermoreflectance (TDTR) method. A large anisotropy was found. At room…
Ultrawide-bandgap rutile GeO2 is emerging as a promising semiconductor for power electronics, where efficient heat dissipation is essential to suppress self-heating and ensure device reliability. However, the temperature dependence and…
An environmentally stable mesoscopic thin film of Au of certain thickness has been deposited thermally on top of a Ag+ implanted oxide substrate to develop a close to room temperature superconductor. This thin film has been deposited in two…
A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic…
The hole carrier field-effect mobility of hybrid molybdenum disulfide (MoS2) nanoparticles suspended in poly(3-hexylthiophene) (P3HT) thin film transistor (TFT) was found to be enhanced when it compared to P3HT-only TFTs. The improvement in…