Related papers: Native defect association in beta-Ga2O3 enables ro…

Recently discovered double gamma/beta ({\gamma}/\b{eta}) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing chemical compositions of…

The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding…

Transport properties of the good thermoelectric misfit oxide Ca$_3$Co$_4$O$_9$ are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on {\it c}-cut sapphire substrates using…

Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on…

By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect…

The Hall conductivities of HgBa_{2}CaCu_{2}O_{6+\delta}and HgBa_{2}Ca_{2}Cu_{3}O_{8+\delta} thin films are investigated for a magnetic field parallel to the c axis. The mixed-state Hall conductivity for these compounds is well described by…

The development of high-performing sensing materials, able to detect ppb-trace concentrations of volatile organic compounds at low temperatures, is required for the development of next-generation miniaturized wireless sensors. Here, we…

We measured the temperature dependence of the linear high field Hall resistivity of La_0.67Ca_0.33MnO_3 (T_C=232K) and La_0.67Sr_0.33MnO_3 (T_C=345K) thin films in the temperature range from 4K up to 360K in magnetic fields up to 20T. At…

Nano-engineering crystalline materials can be used to tailor their thermal properties. By adding new nanoscale phonon scattering centers and controlling their size, one can effectively decrease the phonon mean free path and hence the…

SrVO3 and SrNbO3 are perovskite-type transition-metal oxides with the same d1 electronic configuration. Although SrNbO3 (4d1) has a larger d orbital than SrVO3 (3d1), the reported electrical resistivity of SrNbO3 is much higher than that of…

Outstanding wide-bandgap semiconductor material such as gallium nitride (GaN) has been extensively utilized in power electronics, radiofrequency amplifiers, and harsh environment devices. Due to its quantum confinement effect in enabling…

This research investigates the structural, topological, electrical and optical properties of pulsed laser deposited polycrystalline BiFeO3 thin films on silicon and glass substrate at varying deposition temperatures ranging from 400 degC to…

We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show…

The growth of high-quality superconducting thin film on silicon substrates is essential for quantum computing, and low signal interconnects with industrial compatibility. Recently, the growth of $\alpha$-Ta (alpha-phase tantalum) thin films…

High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge…

The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude…

The alloying of the group-III transparent semiconducting sesquioxides In$_2$O$_3$ and Ga$_2$O$_3$ can lead to a modulation of the properties of the parent compounds, e.g., the shallow- and deep-donor character of the oxygen vacancy or the…

Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO$_3$ thin films (space group $Pna2_1$), grown on economic and technologically important (100)Si substrates by pulsed laser deposition technique.…

In an attempt to clarify conflicting published data, we report new measurements of specific heat, resistivity, magnetic susceptibility, and thermal expansivity up to room temperature for the 6 K superconductor ZrB12, using…

Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist,…