Related papers: Native defect association in beta-Ga2O3 enables ro…
The in-plane optical conductivity of UPd_2Al_3 was measured at temperatures $2 {\rm K}<T<300$ K in the spectral range from 1 cm^{-1} to 40 cm^{-1} (0.14 meV to 5 meV). As the temperature decreases below 25 K a well pronounced pseudogap of…
Bulk gallium oxide (Ga2O3) has been widely used in lasers, dielectric coatings for solar cells, deep-ultraviolet transistor applications due to the large band gap over 4.5 eV. With the miniaturization of electronic devices, atomically thin…
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant…
Gallium oxide is a wide-bandgap semiconductor which has been steadily growing in popularity due to its ultra-wide bandgap, suitability for harsh environments and distinctive opto-electrical properties. Notable applications include deep-UV…
We report on the electrical characterisation of a series of thin chromium oxide films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the…
This work theoretically explores a spectrally selective TPV cell based on an asymmetric Fabry-Perot resonance cavity structure with sub-100-nm GaSb layer. The simulated spectral property of the ultrathin nanophotonic cell structure exhibits…
Electron-correlated two-dimensional (2D) cuprates have been extensively studied since the discovery of high-Tc superconductivity, in contrast, the three-dimensional (3D) counterpart perovskite cuprates remain largely unexplored due to their…
Phonon drag may be harnessed for thermoelectric generators and devices. Here, we demonstrate the geometric control of the phonon-drag contribution to the thermopower. In nanometer-thin electrically conducting $\beta$-Ga$_2$O$_3$ films…
Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…
$\beta$-Ga$_2$O$_3$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptional material properties. However, challenges such as the…
This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the…
We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale…
Although $\beta$-TeO$_2$ is a promising $p$-type transparent conducting oxide (TCO) due to the large optical gap ($\sim$ 3.7 eV) and a light effective hole mass, its hole dopability still remains unexplored. In this work, electronic…
This study investigates minority electron diffusion length and carrier recombination phenomena within p-type, 300 nm-thick Ga2O3 epitaxial films. Utilizing Electron Beam-Induced Current (EBIC) and Cathodoluminescence (CL) spectroscopy,…
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UV sensors and high power transistor applications, with Baliga's figure of merit that far exceeds those of GaN and SiC, second only to diamond. Engineering its band…
In order to replace the conventional liquid electrolytes by solid electrolytes, high room temperature ionic conductivity is required. To achieve such high ionic conductivity, the series Li7-3xGaxLa3Zr1.9Ge0.1O12 was prepared by solid-state…
The effects of planar hole concentration, p, and magnetic field on the resistivity, rho(T), of high-quality c-axis oriented crystalline thin films and sintered Y1-xCaxBa2(Cu1-yZny)3O7-delta samples were investigated over a wide range of Ca,…
Boron-doped polycrystalline silicon-germanium (SiGe) thin films are grown by low-pressure chemical vapor deposition (LPCVD) and their thermoelectric properties are characterized from 120 K to 300 K for the potential applications in…
We determined the complex dielectric functions of $\varepsilon$-Ga$_2$O$_3$ using optical transmittance and reflectance spectroscopies at temperatures from 10 K to room temperature. The measured dielectric-function spectra reveal distinct…
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire…