Related papers: Dispersive readout of a silicon quantum device usi…
Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field ($\textbf{B}_{SO}$) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the inter-dot tunnel couplings, the…
The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional…
Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not straightforward. Here we demonstrate dispersive `gate-only'…
The accuracy of microwave measurements is not only critical for applications in telecommunication and radar, but also for future quantum computers. Qubit technologies such as superconducting qubits or spin qubits require detecting minuscule…
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
Due to the quantum nature of current flow in single-electron devices, new physical phenomena can manifest when probed at finite frequencies. Here, we present a semi-classical small-signal model approach to replace complex single-electron…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by…
Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge…
We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of…
We present results on a double-island single-electron transistor (DISET) operated at radio-frequency (rf) for fast and highly sensitive detection of charge motion in the solid state. Using an intuitive definition for the charge sensitivity,…
With the increasing energy crisis and the prevalent concept of green sustainability, quantum dot materials have become a hot spot in the academic and industrial fields of chemistry. Due to unique, tailor-made photovoltaic properties based…
Based on the scattering matrix theory and non-equilibrium green function method, we have investigated the fluctuations of charge and spin current of the systems which consists of a quantum dot (QD) with a resonant level coupled to two…
Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, spin readout typically relies on proximal charge sensors,…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
In semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple…
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…
Quantum dots are frequently used as charge sensitive devices in low temperature experiments to probe electric charge in mesoscopic conductors where the current running through the quantum dot is modulated by the nearby charge environment.…