Related papers: Dispersive readout of a silicon quantum device usi…
Dephasing of a charge qubit is usually credited to charge noise in the environment. Here we show that charge noise may not be the limiting factor for the qubit coherence. To this end, we study coherence properties of a crystal-phase defined…
We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the…
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of…
High-efficiency single-photon detection in the microwave domain is a key enabling technology for quantum sensing, communication, and information processing. However, the extremely low energy of microwave photons (~{\mu}eV) presents a…
The first generation of Single electron Sensitive Read Out (SiSeRO) amplifiers, employed as on-chip charge detectors for charge-coupled devices (CCDs) have demonstrated excellent noise and spectral performance: a responsivity of around 800…
Rydberg atom-based RF sensors offer distinct advantages over conventional dipole antennas for electric field detection. This paper presents a system model and performance analysis of a Rydberg atom-based quantum radar, which employs optical…
Miniature atomic beams can provide new functionalities for atom based sensing instruments such as atomic clocks and interferometers. We recently demonstrated a planar silicon device for generating well-collimated thermal atomic beams [Nat…
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…
We present time-resolved charge sensing measurements on a GaAs double quantum dot with two proximal quantum point contact (QPC) detectors. The QPC currents are analyzed with cross-correlation techniques, which enables us to measure dot…
We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a…
Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave…
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
The performance of a wide range of quantum computing algorithms and protocols depends critically on the fidelity and speed of the employed qubit readout. Examples include gate sequences benefiting from mid-circuit, real-time,…
We demonstrate the effectiveness of two techniques for using x-rays to evaluate the amount of charge diffusion in charge coupled devices (CCDs). We quantify the degree of charge diffusion with two parameters: sigma_d, the standard deviation…
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement…
A propagation matrix method is proposed to investigate spin-resolved electronic transport in single finger-gate (SFG) and double finger-gate (DFG) controlled split-gate quantum devices. We show how the interplay of the Rashba and…
Single electron transistors (SETs) fabricated from single-walled carbon nanotubes (SWNTs) can be operated as highly sensitive charge detectors reaching sensitivity levels comparable to metallic radio frequency SETs (rf-SETs). Here we…
Fractionalization of symmetry - exemplified by spin-charge separation in the 1D Hubbard model and fractional charges in the fractional quantum Hall effect - is a typical strongly correlated phenomena in quantum many-body systems. Despite…
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…