Related papers: Dispersive readout of a silicon quantum device usi…
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…
We demonstrate dispersive readout of the spin of an ensemble of Nitrogen-Vacancy centers in a high-quality dielectric microwave resonator at room temperature. The spin state is inferred from the reflection phase of a microwave signal…
To reach the next frontier in multimode nonlinear optics, it is crucial to better understand the classical and quantum phenomena of systems with many interacting degrees of freedom -- both how they emerge and how they can be tailored to…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
In this letter, we present fast readout of Pauli spin blockade phenomena and interdot coupling tunability in a silicon double quantum dot (DQD) fabricated using industry-compatible processes. The interdot couplings are tuned with a second…
Detection of single-electron charges in solid-state nanodevices is a key technique in semiconductor quantum bit readout for quantum information processing and probing electronic properties of nanostructures. This detection is achieved using…
Rydberg-atom quantum receivers (RAQRs) enable electric-field sensing with quantum-noise-limited performance, yet their optical readout provides only magnitude measurements whose fluctuations follow Rician statistics governed by atomic…
Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We investigate radio-frequency (rf) reflectometry in a tunable carbon nanotube double quantum dot coupled to a resonant circuit. By measuring the in-phase and quadrature components of the reflected rf signal, we are able to determine the…
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double…
We use microwave radiation generated by a semiconductor double quantum dot (DQD) micromaser for charge state detection. A cavity is populated with n_c ~ 6000 photons by driving a current through an emitter DQD. These photons are used to…
We have designed and characterized a micro-SQUID with dispersive readout for use in low temperature scanning probe microscopy systems. The design features a capacitively shunted RF SQUID with a tunable resonance frequency from 5 to 12 GHz,…
We describe a dispersive nanoSQUID magnetometer comprised of two variable thickness aluminum weak-link Josephson junctions shunted in parallel with an on-chip capacitor. This arrangement forms a nonlinear oscillator with a tunable 4-8 GHz…
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…
Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used…
Qubit readout schemes often deviate from ideal projective measurements, introducing critical issues that limit quantum computing performance. In this work, we model charge-sensing-based readout for semiconductor spin qubits in double…
We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate…