Related papers: Cryogenic Multiplexing with Bottom-Up Nanowires
Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable…
The advancement of quantum technology networks necessitates high-speed, low-thermal load, and minimal-noise communication links between cryogenic and room-temperature components. At the heart of modern telecommunication, lay optical…
Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distribution was increased by raising the growth temperature. The…
We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential…
Solute segregation is used to limit grain growth in nanocrystalline metals, but this stabilization often breaks down at high temperatures. Amorphous intergranular films can form in certain alloys at sufficiently high temperatures, providing…
The research feld of magnonics proposes a low-energy wave-logic computation technology based on spin waves to complement the established CMOS technology and provide a basis for emerging unconventional computation architectures. However,…
Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such…
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped…
Surface acoustic waves (SAWs), with their five orders-of-magnitude slower propagation velocity, allow for considerably shorter wavelengths at the same frequency compared to electromagnetic waves. The short wavelengths allow for device…
As experimental quantum information processing (QIP) rapidly advances, an emerging challenge is to design a scalable architecture that combines various quantum elements into a complex device without compromising their performance. In…
Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or…
Current control techniques for cryogenically cooled qubits are realized with coaxial cables, posing multiple challenges in terms of cost, thermal load, size, and long-term scalability. Emerging approaches to tackle this issue include…
III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in…
The scalability of most transition-edge sensor arrays is limited by the multiplexing technology which combines their signals over a reduced number of wires and amplifiers. In this Letter, we present and demonstrate a multiplexer design…
Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and…
At sub-20nm technologies CMOS scaling faces severe challenges primarily due to fundamental device scaling limitations, interconnection overhead and complex manufacturing. Migration to 3D has been long sought as a possible pathway to…
Signal to noise ratios (SNR) in magnetic resonance microscopy images are limited by acquisition times and the decreasing number of spins in smaller voxels. Significant SNR gains from cooling of the RF receiver are only realized when the…