Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-P\'erot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.
@article{arxiv.2306.00117,
title = {Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate},
author = {Lior Shani and Pim Lueb and Gavin Menning and Mohit Gupta and Colin Riggert and Tyler Littman and Frey Hackbarth and Marco Rossi and Jason Jung and Ghada Badawy and Marcel A. Verheijen and Paul Crowell and Erik P. A. M. Bakkers and Vlad S. Pribiag},
journal= {arXiv preprint arXiv:2306.00117},
year = {2024}
}