Related papers: Cryogenic Multiplexing with Bottom-Up Nanowires
Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator based neuromorphic computing combining nano-scale footprint, fast and ultra-wide microwave frequency tunability, CMOS…
We study the structural, optical, and transport properties of sidewall quantum wires on GaAs(001) substrates. The QWRs are grown by molecular beam epitaxy (MBE) on GaAs(001) substrates prepatterned with shallow ridges. They form as a…
Proximity induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault tolerant quantum computation. Recent theoretically proposed architectures…
We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20nm in diameter in the [100], [110] and [111] crystallographic transport orientations. We use atomistic…
Random device mismatch that arises as a result of scaling of the CMOS (complementary metal-oxide semi-conductor) technology into the deep submicron regime degrades the accuracy of analogue circuits. Methods to combat this increase the…
Simulation of conditional master equations is important to describe systems under continuous measurement and for the design of control strategies in quantum systems. For large bosonic systems, such as BEC and atom lasers, full quantum field…
Time-division multiplexing of cryogenic signals is a promising approach to reduce space requirements, shorten cooldown times, and increase the number of quantum devices measured per cooldown. We demonstrate time-division multiplexing of…
Due to their memristive properties nanowire networks are very promising for neuromorphic computing applications. Indeed, the resistance of such systems can evolve with the input voltage or current as it confers a synaptic behaviour to the…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
This letter analyzes the scaling property of nanowire (NW) phase change memory (PCM) using analytic and numerical methods. The scaling scenarios of the three widely-used NW PCM peration schemes (constant electric field, voltage, and…
Assembling nanostructured building blocks into network materials unlocks macroscopic properties inaccessible with monolithic solids, notably toughness and tolerance to electrochemical alloying. A method is reported for large-scale,…
We make use of a custom-designed cryo-CMOS multiplexer (MUX) to enable multiple quantum devices to be characterized in a single cool-down of a dilution refrigerator. Combined with a packaging approach that integrates cryo-CMOS chips and a…
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy (MBE) at 220 {\deg}C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs…
Electron shuttling is emerging as a key mechanism for enabling long-range coupling in scalable spin-qubit architectures. Bringing shuttling waveform generation into the cryostat can improve scalability, but imposes strict area and power…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
We describe in detail a set of ideas for implementing qubits, quantum gates and quantum gate networks in a semiconductor heterostructure device. Our proposal is based on an extension of the technology used for surface acoustic wave (SAW)…
The rapidly increasing interest in nanowires (NWs) of GaN and associated III-Nitrides for (opto-)electronic applications demands immediate addressal of the technological challenges associated with both NW-growth and device processing.…
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging.…
Parametric amplifiers have become a workhorse in superconducting quantum computing, however research and development of these devices has been hampered by inconsistent, and sometimes misleading noise performance characterization…
Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG…