Related papers: Electron Charge Sensor with Hole Current Operating…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film…
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…
We present measurements of current noise in quantum point contacts as a function of source-drain bias, gate voltage, and in-plane magnetic field. At zero bias, Johnson noise provides a measure of the electron temperature. At finite bias,…
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…
State-of-the-art quantum processors have recently grown to reach 100s of physical qubits. As the number of qubits continues to grow, new challenges associated with scaling arise, such as device variability reduction and integration with…
Encoding information onto optical fields is the backbone of modern telecommunication networks. Optical fibers offer low loss transport and vast bandwidth compared to electrical cables, and are currently also replacing coaxial cables for…
We report electrical transport measurements of arrays of PbSe nanocrystals forming the channels of field effect transistors. We measure the current in these devices as a function of source-drain voltage, gate voltage and temperature.…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic…
Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better…
We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
We present a thermometry scheme to extract the temperature of a 2DEG by monitoring the charge occupation of a weakly tunnel-coupled 'thermometer' quantum dot using a quantum point contact detector. Electronic temperatures between 97 mK and…
An all-optical atomic Controlled-NOT (CNOT)/polarization gate operation is demonstrated with low light intensities in a room-temperature atomic medium. Using a Polarization-Selective-Kerr-Phase-Shift (PSKPS) technique, a $\pi$ phase shift…
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…
In semiconductor-based quantum technologies, the capability to shuttle charges between components is profoundly enabling. We numerically simulated various "conveyor-belt" shuttling scenarios for simple Si/SiO2 devices, explicitly modelling…
A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event…
As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…