Related papers: Electron Charge Sensor with Hole Current Operating…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source…
In the pursuit of quantum computing, solid-state quantum systems, particularly superconducting ones, have made remarkable advancements over the past two decades. However, achieving fault-tolerant quantum computing for next-generation…
We present an experimental realization of a Coulomb blockade refrigerator (CBR) based on a single - electron transistor (SET). In the present structure, the SET island is interrupted by a superconducting inclusion to permit charge transport…
The mechanism of single-charge pumping using a dynamic quantum dot needs to be precisely understood for high-accuracy and universal operation toward applications to quantum current standards and quantum information devices. The type of…
Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state…
Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…
We consider a molecular single electron transistor coupled to a vibrational mode. For some values of the bias and gate voltage transport is possible only by absorption of one ore more phonons. The system acts then as a cooler for the…
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we…
A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature > 300 K. The internal quantum efficiency of the luminescence, equal to…
We analyze heat and charge transport through a single-level quantum dot coupled to two BCS superconductors at different temperatures to first order in the tunnel coupling. In order to describe the system theoretically, we extend a real-time…
A number of critical active and passive components of optical links have been tested at 77 K or lower temperatures, demonstrating potential development of optical links operating inside the liquid argon time projection chamber (LArTPC)…
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study…
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
Electron excitations at silicon and 3C-SiC surfaces caused by an intense femtosecond laser pulse can be calculated by solving the time-dependent density functional theory and the Maxwell's equation simultaneously. The energy absorption,…
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…
Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence…
Spin-orbit (SO) coupling has led to numerously exciting phenomena in electron systems, for instance, the recently discovered topological insulator. The synthesized SO coupling with ultracold neutral atoms opens a new avenue of quantum…
This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic…