Related papers: Electron Charge Sensor with Hole Current Operating…
This paper presents the design and benchmarking of cryogenic bulk-FETs using an experimentally calibrated TCAD framework that integrates 2-D electrostatics and interface-trap effects from $T = 2$ K to 300 K. For a 28-nm node device, carrier…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an…
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive…
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top…
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…
This manuscript reports a semiconductor-sensitized thermal cell (STC) that converts ambient heat into electrical power while simultaneously reducing its own temperature under isothermal conditions. Using a printable…
This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit…
Based on the assumption that the contact barrier height determines the current flow in organic semiconductor-based electronic devices, charge injection at metal-organic (MO) interfaces has been extensively investigated, while space-charge…
Lithium niobate is a promising platform for integrated quantum optics. In this platform we aim to efficiently manipulate and detect quantum states by combining superconducting single photon detectors and modulators. The cryogenic operation…
We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage…
Interfacing single-photon detectors with active photonic components is a cornerstone photonic quantum technology. We describe how the output signal of commercial superconducting nanowire single-photon detectors can be used in situ to drive…
We investigate thermally-driven transport of heat and charge in a superconducting single-electron transistor by means of a real-time diagrammatic transport theory. Our theoretical approach allows us to account for strong Coulomb…
We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid $^4$He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to…
Herein, we report the use of nanostructured crystalline Si as a thermoelectric material and its integration into thermoelectric harvesters. The proof-of-concept relies on the partial suppression of lattice thermal transport by introducing…
Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room…
We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H$_3$S with the $Im\bar{3}m$ structure at megabar pressure. The hole doping can fine-tune the Fermi energy to reach the electronic…
Scaling superconducting quantum computers to the fault-tolerant regime calls for a commensurate scaling of the classical control and readout stack. Today's systems largely rely on room-temperature, rack-based instrumentation connected to…
Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that the application of induced source/drain extensions to the SOI…