Related papers: Electron Charge Sensor with Hole Current Operating…

This paper presents a novel approach utilizing a scalable neural decoder application-specific integrated circuit (ASIC) based on metal oxide memristors in a 180nm CMOS technology. The ASIC architecture employs in-memory computing with…

We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam…

Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip…

Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…

This paper demonstrates the use of voltage noise thermometry, with a cross-correlation technique, as a dissipation-free method of thermometry inside a CMOS integrated circuit (IC). We show that this technique exhibits broad agreement with…

Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will…

We consider a gated one-dimensional (1D) quantum wire disturbed in a contactless manner by an alternating electric field produced by a tip of a scanning probe microscope. In this schematic 1D electrons are driven not by a pulling electric…

Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…

We demonstrate that individual electron-hole pairs are resolved in a 1 cm$^2$ by 4 mm thick silicon crystal (0.93 g) operated at $\sim$35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted…

We developed a simple, flexible, low-cost, and computer-controlled cryogenic temperature measurement system for undergraduate instructional laboratories. An Arduino microcontroller board measures the voltage across a silicon diode to…

We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…

Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those of complementary metal-oxide semiconductor (CMOS) devices,…

Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per…

We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of…

Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based…

It has been shown recently that the overpotential originating from ionic conduction of alkali-ions through the inner dense solid-electrolyte interphase (SEI) is strongly non-linear. An empirical equation was proposed to merge the measured…

We have used a single-particle detector system, based on secondary electron emission, for counting low-energetic (~keV/u) massive products originating from atomic and molecular ion reactions in the electrostatic Cryogenic Storage Ring…

We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the…

The performance of a Si PIN diode (type Hamamatsu S3590-06) as an energy sen- sitive detector operating at cryogenic temperatures (~10 K) and in magnetic fields up to 11 T was investigated, using a 207Bi conversion electron source. It was…