Related papers: Monolithically integrated 940 nm half VCSELs on bu…

High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk…

High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have…

We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional…

Vertical-cavity surface-emitting laser (VCSEL) structures emitting near 940 nm were grown by solid source molecular beam epitaxy (MBE) on Ge(001) substrates. The VCSEL MBE-growth was realized upon a virtual substrate composed of GaAs on Ge…

III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving…

Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the…

Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut…

The paper reports on fundamental properties of the GaN/AlN quantum wells (QWs) with nominal subcritical thicknesses of 0.75-2 monolayers (MLs). They are grown by plasma-activated molecular beam epitaxy, varying either the nominal thickness…

We present high-performance megahertz micromechanical oscillators based on freestanding epitaxial AlGaAs distributed Bragg reflectors. Compared with dielectric reflectors, the low mechanical loss of the monocrystalline heterostructure gives…

High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the…

This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during…

We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a…

By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic…

We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature,…

Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting…

High-reflectivity mirrors in the mid-infrared (MIR) range are essential for next-generation optoelectronic devices but are still constrained by strain accumulation, poor thermal conductivity, and growth instability of thick multi-alloy…

We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/In$_{0.15}$Ga$_{0.85}$As/GaAs/AlAs/GaAs nanowires. Fabricated by molecular beam epitaxy on a pre-patterned Si(111)…

We present the realization and characterization of a 20 fold, fully lattice-matched epitaxial distributed Bragg reflector based on (Cd,Zn)Te and (Cd,Zn,Mg)Te layers. We also present a microcavity based on (Cd,Zn,Mg)Te containing a (Cd,Zn)Te…

V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of…

We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas…