We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than the GaAs DBRs and have double peaks. Transfer matrix method calculations, surface scratch and polishing tests were conducted, which suggest that the surface cross-hatch was the cause of the inferior DBR reflectance spectra.
@article{arxiv.2209.01690,
title = {Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates},
author = {Jia Guo and Yunlong Zhao and Markus Feifel and Hao-tien Cheng and Yun-cheng Yang and Lukas Chrostowski and David Lackner and Chao-hsin Wu and Guangrui and Xia},
journal= {arXiv preprint arXiv:2209.01690},
year = {2022}
}