High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have reflectivity spectra comparable to those grown on conventional bulk off-cut GaAs substrates and have smooth morphology, and good periodicity and uniformity. Anitphase domain formation is significantly reduced in GaAs on ART-Ge/Si substrates, and etch pit density of the GaAs base layer on the ART-Ge substrates ranges from 10^5 to 6 x 10^6 cm^(-2). These results paved the way for future VCSEL growth and fabrication on these ART-Ge substrates and also confirm that virtual Ge substrates via ART technique are effective Si platforms for optoelectronic integrated circuits.
@article{arxiv.1601.04108,
title = {Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping},
author = {Yiheng Lin and Wei Shi and Jizhong Li and Ting-Chang Chang and Ji-Soo Park and Jennifer Hydrick and Zigang Duan and Mark Greenberg and James G. Fiorenza and Lukas Chrostowski and Guangrui Xia},
journal= {arXiv preprint arXiv:1601.04108},
year = {2017}
}