Related papers: Monolithic Integration of AlGaAs Distributed Bragg…
High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk…
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional…
High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance…
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the…
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut…
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the…
We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a…
In-situ measurement is a key feature to better understand and precisely control the growth of complex structures, such as vertical-cavity surface-emitting lasers. In this work, we are showing the precise measurement of optical indices of…
Distributed Bragg reflectors (DBRs) are one of the basic photonic structures used to define microcavities for fundamental light-matter coupling studies, as well as to optimize performance of optoelectronic and photonic devices, e.g., lasers…
We present an approach to the molecular-beam epitaxy of high-Q planar GaAs-based microcavities in which the AlGaAs high-index layers of the distributed Bragg reflectors (DBRs) are replaced by short-period GaAs/AlAs superlattices (digital…
We report on the design, realization and characterization of optically pumped micropillar lasers with low-absorbing Al$_{0.2}$Ga$_{0.8}$As/Al$_{0.9}$Ga$_{0.1}$As dielectric Bragg reflectors (DBRs) instead of commonly used GaAs/AlGaAs DBRs.…
Distributed bragg reflectors (DBRs) consisting of ZnO and amorphous silicon (a-Si) were prepared by magnetron sputtering method for selective light trapping. The quarter-wavelength ZnO/a-Si DBRs with only 6 periods exhibit a peak…
High-reflectivity mirrors in the mid-infrared (MIR) range are essential for next-generation optoelectronic devices but are still constrained by strain accumulation, poor thermal conductivity, and growth instability of thick multi-alloy…
The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards…
We present high-performance megahertz micromechanical oscillators based on freestanding epitaxial AlGaAs distributed Bragg reflectors. Compared with dielectric reflectors, the low mechanical loss of the monocrystalline heterostructure gives…
III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving…
We present high-reflectivity mechanical resonators fabricated from AlGaAs heterostructures for use in free-space optical cavities operating in the telecom wavelength regime. The mechanical resonators are fabricated in slabs of GaAs and…
Distributed Bragg Reflectors (DBR) are well-established photonic structures that are used in many photonic applications. However, most of the DBRs are based on different materials or require post-process etching which can hinder integration…
We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR)…
We demonstrate a new approach to integrate single layer MoSeR2R and WSeR2R flakes into monolithic all-dielectric planar high-quality micro-cavities. These distributed-Bragg-reflector (DBR) cavities may e.g. be tuned to match the exciton…