Related papers: Defect Profiling of Oxide-Semiconductor Interfaces…
In a recent Letter by Romanenko et al., the authors used low-energy muon spin rotation (LE-$\mu$SR) to measure the Meissner screening profile in cutouts from Nb superconducting radio frequency (SRF) cavities, systematically comparing how…
The study of novel quantum materials relies on muon-spin rotation, relaxation, or resonance (\mSR) measurements. Yet, a fundamental limitation persists: many of these materials can only be synthesized in extremely small quantities, often at…
Oxide growth with semiconductor-like accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This yielded spectacular discoveries such as…
Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has…
Oxides containing iridium ions display a range of magnetic and conducting properties that depend on the delicate balance between interactions and are controlled, at least in part, by the details of the crystal architecture. We have used…
The electronic and magnetic states of $\beta$-MnO$_{2}$ in terms of hydrogen impurities have been investigated by muon spin rotation ($\mu$SR) technique combined with density-functional theory (DFT) calculations for muon as pseudo-hydrogen.…
At vertical edges, thin films of silicon oxide (SiO_{2-x}) contain semiconductive c-Si layered nanocrystals (Si NC) embedded in and supported by an insulating g-SiO2 matrix. Tour et al. have shown that a trenched thin film geometry enables…
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s*…
The efficient tagging of individual muons, along with the stability of the involved ultrathin carbon foil, is critical for ensuring fast, reliable and reproducible low-energy muon spin rotation (LE-$\mathrm{\mu}$SR) measurements. At the…
Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric…
A high-statistics determination of the differential cross section of elastic muon-electron scattering as a function of the transferred four-momentum squared, $d \sigma_{el}(\mu e \to \mu e)/dq^2$, has been argued to provide an effective…
Using the simulation framework of the SiD detector to study the Higgs -> mumu decay channel showed a considerable gain in signal significance could be achieved through an increase in charged particle momentum resolution. However more…
SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of…
Muon tomography is a non-destructive imaging technique that exploits cosmic-ray muons from multiple directions. Its performance critically depends on the stability, active-area coverage, and spatial resolution of position-sensitive…
A new experimental approach for in-situ Raman spectroscopy of the electrode | solid electrolyte interfaces in controlled atmospheres, based on the use of optically transparent single-crystal membranes of stabilized cubic zirconia, has been…
We present first-principles calculations of the structural and electronic properties of Si(001)-SiO2 interfaces. We first arrive at reasonable structures for the c-Si/a-SiO2 interface via a Monte-Carlo simulated annealing applied to an…
Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for…
Continuous solid electrolyte interface (SEI) formation remains the limiting factor of the lifetime of silicon nanoparticles (SiNPs) based negative electrodes. Methods that could provide clear diagnosis of the electrode degradation are of…
Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current…
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against short-channel effects, high air stability, and potential for…