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The integration of high-k dielectrics with two-dimensional (2D) semiconductors is a critical step towards high-performance nanoelectronics, which however remains challenging due to high density of interface states and the damage to the…

Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times…

Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and…

We report a study on the interface between polar high-k materials and the Si(001)-(2X1) reconstructed surface with LaAlO3 taken as a prototype material. The construction of the interface is based on the prior growth of metal lines followed…

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and…

Muon spin relaxation/rotation (muSR) is a vital technique for probing the superconducting gap structure, pairing symmetry and time reversal symmetry breaking, enabling an understanding of the mechanisms behind the unconventional…

Under various conditions of the growth process, when the presumably unconventional superconductor Sr$_2$RuO$_4$ (SRO) contains micro-inclusions of Ru metal, the superconducting critical temperature increases significantly. An STEM study…

Detailed quantum chemistry calculations within the multireference configuration interaction approximation with the Davidson correction (MRCI+Q) are presented using an aug-cc-pV6Z basis set, for the potential energy curves and transition…

In this study, we explore the heterointerface of MgB$_2$ film on SiC substrate at atomic scale using electron microscopy and spectroscopy. We detect ~1 nm MgO between MgB$_2$ and SiC. Atomic-level electron energy loss spectra (EELS) show…

The fabrication of micro- and nano-scale silicon electronic devices requires precision lithography and controlled processing to ensure that the electronic properties of the device are optimized. Importantly, the Si-SiO2 interface plays a…

In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245…

We propose a novel method for identification of a linear pattern of pixels on a two-dimensional grid. Following principles employed by the visual cortex, we employ orientation selective neurons in a neural network which performs this task.…

Depth-sensitive magnetic, structural and chemical characterization is important in the understanding and optimization of novel physical phenomena emerging at interfaces of transition metal oxide heterostructures. In a simultaneous approach…

Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…

Low-energy light ion beams are an essential resource in lithography for nanopatterning magnetic materials and interfaces due to their ability to modify the structure and properties of metamaterials. Here we create…

Due to the muon tomography's capability of imaging high Z materials, some potential applications have been reported on inspecting smuggled nuclear materials in customs. A compact Cosmic Ray Muons (CRM) imaging prototype, Lanzhou University…

The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the…

The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature…

Hydrogen dynamics in the nanoscale region of VO$_{2}$ was investigated by muon spin rotation/relaxation ($\mu $SR) technique. Positively charged muon acts as a light radioisotope of proton and can be used as a probe to explore the inside of…

We demonstrate that combining standing-wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide…