Related papers: Defect Profiling of Oxide-Semiconductor Interfaces…
The ZnO films, 25 nm thick were deposited by e-beam evaporation of ZnO (99.9%) pellets onto native oxide covered silicon (100) substrates. Details of the interface chemical composition and the chemical depth profile have been deduced as…
The formation of hydrogen-like muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz and sapphire. By varying the…
The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time…
Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
The low-energy muon facility at PSI provides nearly fully polarized positive muons with tunable energies in the keV range to carry out muon spin rotation (LE-muSR) experiments with nanometer depth resolution on thin films, heterostructures,…
The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of…
Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative…
The silicon suboxide SiOx (x<2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore,…
Understanding and manipulating properties emerging at a surface or an interface require a thorough knowledge of structure-property relationships. We report a study of a prototype oxide system, La2/3Sr1/3MnO3 grown on SrTiO3(001), by…
Transverse-field muon spin rotation ($\mu$SR) experiments in the heavy-fermion superconductor PrOs$_{4}$Sb$_{12}$ ($T_{c}=1.85$ K) suggest that the superconducting penetration depth $\lambda(T)$ is temperature-independent at low…
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to…
We performed depth-dependent low-energy muon spin spectroscopy ($\mu$SR) studies on three palladium 100 nm thin films, both undoped and doped with 170 ppm of iron. Muons implanted in the surface and substrate interface region probe an…
Intermediate frequency range (511 - 514 cm-1) Si phonons in Si-SiO2 nanocomposites are shown to have contribution from both core1 and surface/interface1 Si phonons, where, ratio of contribution of the two depends on the size of a Si…
Interface structures in complex oxides remain one of the active areas of condensed matter physics research, largely enabled by recent advances in scanning transmission electron microscopy (STEM). Yet the nature of the STEM contrast in which…
Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure…
The PSI low-energy $\mu$SR spectrometer is an instrument dedicated to muon spin rotation and relaxation measurements. Knowledge of the muon beam parameters such as spatial, kinetic energy and arrival-time distributions at the sample…
In this work we investigate superconducting properties of niobium samples via application of the muon spin rotation/relaxation (muSR) technique. We employ for the first time the muSR technique to study samples that are cutout from large and…
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…
Recently, x-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization and to probe their structure. Here we explore a method of defect-engineering low-dimensional systems using focused…