Related papers: Defect Profiling of Oxide-Semiconductor Interfaces…
Here we study the range of keV positive muons $\mu^+$ implanted in Nb$_2$O$_5$($x$ nm)/Nb($y$ nm)/SiO$_2$(300 nm)/Si [$x$ = 3.6 nm, 3.3 nm; $y$ = 42.0 nm, 60.1 nm] thin films using low-energy muon spin spectroscopy (LE-$\mu$SR). At…
Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface manipulation of 3D structured surfaces on the atomic scale.…
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…
Muon-spin spectroscopy at continuous sources has stagnated at a stopped muons rate of ~40 kHz for the last few decades. The major limiting factor is the requirement of a single muon in the sample during the typical 10 {\mu}s data gate…
A semiconductor tracker for muon scattering tomography is presented. The tracker contains silicon strip sensors with an $80\,\mu$m pitch, precision mechanics and integrated cooling. The electronic readout of the sensors is performed by a…
The ability to follow Moore's Law has been the basis of the tremendous success of the semiconductor industry in the past decades. To date, the greatest challenge for device scaling is the required replacement of silicon dioxide-based gate…
We report a first-principles theoretical study of hyperfine interactions, zero-point effects and defect energetics of muonium and hydrogen impurities in silicon and germanium. The spin-polarized density functional method is used, with the…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate…
The investigation of the properties of metal-semiconductor interfaces has gained significant attention due to the unique features that emerge from the combination of both metal and semiconductor attributes. In this report, the magnetic…
We present a novel approach to study the spin and symmetry electronic properties of buried interfaces using low-energy spin-resolved photoemission spectroscopy. We show that this method is sensitive to interfaces buried below more than 20ML…
The Si/SiO$_2$ interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic…
Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great…
The Low-Energy Muon beamline (LEM) at the Paul Scherrer Institute currently stands as the world's only facility providing a continuous beam of low-energy muons with keV energies for conducting muon spin rotation experiments on a nanometer…
In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an…
Kinetic 3D lattice Monte Carlo studies are presented on Si nanocrystal (NC) formation by phase separation in 1 keV Si implanted thin SiO2 films. The simulation start from Si depth profiles calculated using the dynamic, high-fluence binary…
Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is…
Atomically thin transition metal dichalcogenides (TMDs) are promising candidates for next-generation transistor channels due to their superior scaling properties. However, the integration of ultra-thin gate dielectrics remains a challenge,…
In this work, we present a quantum mechanical approach for the simulation of Si/SiO2 interface roughness scattering in silicon nanowire transistors (SNWTs). The simulation domain is discretized with a three-dimensional (3D) finite element…
The presence of spin-orbit (SO) interaction in a noncentrosymmetric superconductor, La2C3 (T_c~11 K) is demonstrated by muon spin rotation (muSR) in its normal state, where muSR spectra exhibit field-induced weak depolarization due to van…