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Microscale additive manufacturing of reflective copper is becoming increasingly important for microelectronics and microcomputers, due to its excellent electrical and thermal conductivity. Yet, it remains challenging for state-of-the-art…
We use high resolution Eulerian hydrodynamics simulations to study kinematic properties of the low ionization species in damped Ly-alpha systems at redshift z=3. Our adaptive mesh refinement simulations include most key ingredients relevant…
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using…
The crystallization of amorphous solids under ultrafast laser irradiation represents a paradigm of non-equilibrium phase transitions, where the interplay between electromagnetic energy localization and atomic-scale dynamics remains largely…
Silicon dioxide is a suitable material to encapsulate proteins at room temperature so that they can be analysed at the atomic level using laser-assisted atom probe tomography (La-APT). To achieve this goal, in this study we show that UV and…
Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the…
Curable hydrogels have tunable properties that make them well-suited for applications in drug delivery, cell therapies, and 3D bioprinting. Advances in microfluidic droplet generation enable rapid fabrication of polymer-filled droplets.…
Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were…
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…
High quality integrated diamond photonic devices have previously been demonstrated in applications from non-linear photonics to on-chip quantum optics. However, the small sample sizes of single crystal material available, and the difficulty…
The creation of fluorescent defects in silicon is a key stepping stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing,…
Monocrystalline silicon solar cells with photo-absorbing morphology can amplify light-trapping properties within the absorber layer and help to fabricate cost-effective solar cells. In this paper, the effect of different parameters namely…
Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed recoil implantation - in which a…
Generation of highly collimated monoenergetic relativistic ion beams is one of the most challenging and promising areas in ultra-intense laser-matter interactions because of the numerous scientific and technological applications that…
We demonstrate a silicon-based electron accelerator that uses laser optical near fields to both accelerate and confine electrons over extended distances. Two dielectric laser accelerator (DLA) designs were tested, each consisting of two…
Raman lasers based on integrated silica whispering gallery mode resonant cavities have enabled numerous applications from telecommunications to biodetection. To overcome the intrinsically low Raman gain value of silica, these devices…
The electrical and optoelectronic properties of transition-metal dichalcogenides (TMDs), such as MoS2, are highly dependent on carrier doping and layer thickness. The ability to selectively control these two critical characteristics is of…
We fabricated two dimensional photonic crystal structures in zinc oxide films with focused ion beam etching. Lasing is realized in the near ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing…
In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L)…
Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as…