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We report a new method to introduce metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet (UV) light releasing metal species into the semiconductor substrate. Secondary ion…
Femtosecond pulses have been used to reveal hidden broken symmetry states and induce transitions to metastable states. However, these states are mostly transient and disappear after laser removal. Photoinduced phase transitions towards…
This paper reports an innovative process to fabricate $\beta$-Ga$_{2}$O$_{3}$ microtubes and nanomembranes based on ion implantation in (100)-oriented single-crystals. We show that, under specific flux and fluence conditions, the…
This work reports the successful formation of Ag and Au nanoparticles in $\beta$-Ga$_2$O$_3$ single-crystals by ion implantation and annealing at 550 {\deg}C. X-ray diffraction measurements revealed that nanoparticles were formed after the…
We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP…
The advance of topological photonics has heralded a revolution for manipulating light as well as for the development of novel photonic devices such as topological insulator lasers. Here, we demonstrate topological lasing of circular…
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible…
Femtosecond laser-induced alloying presents a novel approach to modifying bimetallic systems. Visualizing ultrafast processes during laser-induced alloying is essential to uncover fundamental mechanisms associated with phase…
A high-intensity proton beam exposure with 181 MeV energy has been conducted at Brookhaven Linac Isotope Producer facility on various material specimens for accelerator targetry applications, including titanium alloys as a beam window…
Ultrashort laser pulses allows to deliver electromagnetic energy to matter causing its localized heating that can be used for both material removal via ablation/evaporation and drive interface chemical reactions. Here, we showed that both…
In order to study the origin of metallization of VO$_2$ induced by electron injection, we deposit K atoms onto the surface of VO$_2$ films grown on TiO$_2$ (001) substrates, and we investigate the change in the electronic and crystal…
Opto-mechanical interactions in planar photonic integrated circuits draw great interest in basic research and applications. However, opto-mechanics is practically absent in the most technologically significant photonics platform: silicon on…
In presented work, a reactive high-power impulse magnetron sputtering (r-HiPIMS) was used for high-rate deposition ( 170 nm/min) of Cu2O films. Films were deposited on a standard soda-lime glass (SLG) substrate at a temperature of 190C.…
Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice…
The chemical deposition of high-performance Zinc Oxide (ZnO) thin films is challenging, thus significant efforts have been devoted during the past decades to develop cost-effective, scalable fabrication methods in gas phase. This work…
We demonstrate room-temperature spin-polarized ultrafast ($\sim$10 ps) lasing in a highly optically excited GaAs microcavity. This microcavity is embedded with InGaAs multiple quantum wells in which the spin relaxation time is less than 10…
We investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD…
We study the evolution of prior columnar $\beta$ phase, interface $L$ phase, and $\alpha$ phase during directional solidification of a Ti-6Al-4V melt pool. Finite element simulations estimate the solidification temperature and velocity…
Intrinsic hydrogenated amorphous silicon films can provide outstanding surface passivation of crystalline silicon wafer surfaces. This quality of Intrinsic hydrogenated amorphous silicon makes it valuable in heterojunction with intrinsic…
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs).…