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Related papers: Solid Phase Recrystallization in Arsenic Ion-Impla…

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It has been reported that conversion yield and coherence time of ion-implanted NV centers improve if the Fermi level is raised or lowered during the annealing step following implantation. Here we investigate whether surface transfer doping…

Materials Science · Physics 2020-08-26 N. J. Glaser , G. Braunbeck , O. Bienek , I. D. Sharp , F. Reinhard

For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and high temperature profiles ($>1000^\circ$C). When the maximum…

While ultrafast laser welding is an appealing technique for bonding transparent workpieces, it is not applicable for joining silicon samples due to nonlinear propagation effects which dramatically diminishes the possible energy deposition…

Applied Physics · Physics 2023-03-08 Maxime Chambonneau , Qingfeng Li , Markus Blothe , Stefan Nolte

Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high…

The kinetics of E' centers induced in silica by 4.7eV laser irradiation was investigated observing in situ their optical absorption band at 5.8 eV. After exposure the defects decay due to reaction with diffusing molecular hydrogen of…

Materials Science · Physics 2009-11-10 F. Messina , M. Cannas

Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface manipulation of 3D structured surfaces on the atomic scale.…

Solid-phase epitaxial crystallization of amorphous Si layers on a crystalline Si substrate during B-ion irradiation is investigated over the temperature range 293 - 573 K. Regrowth occurs at all measured temperatures, with activation energy…

Materials Science · Physics 2015-12-03 N. E. B. Cowern , B. J. Pawlak , R. Gwilliam

Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose.…

Optics · Physics 2009-11-13 M. Borselli , T. J. Johnson , C. P. Michael , M. D. Henry , Oskar Painter

The Hydrogenated Diamond Like Carbon (HDLC) thin films are deposited on Silicon substrate at room temperature using asymmetric capacitively coupled RF plasma with varying flow rates of methane. These films are undergone annealing at high…

Materials Science · Physics 2015-06-18 J Datta , H S Biswas , P Rao , G L N Reddy , S Kumar , N R Ray , D P Chowdhury , A V R Reddy

Here, upon systematic studies of femtosecond-laser processing of monocrystalline Si in oxidation-preventing methanol, we showed that the electromagnetic processes dominating at initial steps of the progressive morphology evolution define…

UV laser irradiation (lambda = 193 nm), below and above damage thresholds, is used to both alter and pattern the surface properties of borosilicate slides to tune and control the contact angle of a water drop over the surface. Large…

Materials Science · Physics 2014-01-22 John Canning , Hadrien Weil , Masood Naqshbandi , Kevin Cook , Matthieu Lancry

Laser ablation through liquid is an important process that have to be studied for applications which use laser ablation in liquid (LAL) and laser shock peening (LSP). LAL is employed for production of suspensions of nanoparticles, while LSP…

Computational Physics · Physics 2019-10-22 N. A. Inogamov , V. A. Khokhlov , Yu. V. Petrov , V. V. Zhakhovsky

A key challenge for quantum photonic technologies based on spin qubits is the creation of optically active defects in photonic resonators. Several of the most promising defects for quantum applications are hosted in diamond, and are…

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it…

A molecular-dynamics thermal annealing model is proposed to investigate the mechanisms involved in picosecond pulsed laser ablation of crystalline silicon. In accordance with the thermal annealing model, a detailed description of the…

Materials Science · Physics 2007-05-23 Patrick Lorazo , Laurent J. Lewis , Michel Meunier

The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…

Microlaser with multiple lasing bands is critical in various applications, such as full-colour display, optical communications and computing. Here, we propose a simple and efficient method for homogeneously doping rare earth elements into a…

Optics · Physics 2021-07-20 Bo Jiang , Song Zhu , Linhao Ren , Lei Shi , Xinliang Zhang

Femtosecond laser ablation has been demonstrated to be a versatile tool to produce micro/nanoscale features with high precision and accuracy. However, the use of high laser fluence to increase the ablation efficiency usually results in…

Laser-based additive manufacturing offers a promising route for 3D printing of metallic parts. We evidence experimentally a particular columnar solidification microstructure in a Laser Powder-Bed Fusion processed Inconel 718 nickel-based…

Materials Science · Physics 2019-01-23 G. Boussinot , M. Apel , J. Zielinski , U. Hecht , J. H. Schleifenbaum

Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…