Related papers: Solid Phase Recrystallization in Arsenic Ion-Impla…
Physical vapor deposition can prepare organic glasses with high kinetic stability. When heated, these glassy solids slowly transform into the supercooled liquid in a process known as rejuvenation. In this study, we anneal vapor-deposited…
In dielectric laser-driven accelerators (DLA), careful tuning of drive-laser wavelength and structure periodicity is typically required in order to hit the resonant condition and match the phase velocity of the accelerating wave to the…
$Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the…
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy…
Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al…
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 {\deg}C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain…
Optimizing thermal anneals of Si-implanted $\beta$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on activation of room temperature…
During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of…
Ultrashort pulsed laser annealing is an efficient technique for crystallizing amorphous semiconductors with the possibility to obtain polycrystalline films at low temperatures, below the melting point, through non-thermal processes. Here, a…
We present molecular dynamics simulations of shallow Al implantation in 4H-SiC to clarify how implantation temperature and dose control defect evolution and dopant activation during early annealing. Using the Gao-Weber potential together…
For the first time, cyclic re-austenitization is carried out for additively manufactured high-strength low-alloy (HSLA) steels in order to refine the microstructure by reducing the prior austenite grain (PAG) size. In this work, HSLA-100…
Selenium has resurged as a promising photovoltaic material in solar cell research due to its wide direct bandgap of 1.95 eV, making it a suitable candidate for a top cell in tandem photovoltaic devices. However, the optoelectronic quality…
Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the…
We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si wafers enabled by the molecular monolayer doping of phosphorous and boron atoms and the use of conventional spike annealing. The junctions are characterized by…
Liquid-crystal microcavity lasers have attracted considerable attention because of their extraordinary tunability and sensitive response to external stimuli, and they operate generally within a specific phase. Here, we demonstrate a…
Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free,…
The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal…
Dielectric laser acceleration (DLA) achieves remarkable gradients from the optical near fields of a grating structure. Tilting the dielectric grating with respect to the electron beam leads to deflection forces and the DLA structure can be…
We report on a laser annealing procedure which greatly improves the quality of suspended monolayers of chemical vapor deposition (CVD) grown MoSe2. Annealing with a green laser locally heats the suspended flake to approximately 600 K, which…
Metastable silicon phases have attracted extensive attention these years, due to their fundamentally distinct photoelectric properties compared to the conventional diamond cubic (I) counterpart. Certain metastable phases, prepared via…