Related papers: MRAM-based Analog Sigmoid Function for In-memory C…

In this paper, the intrinsic physical characteristics of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons in neuromorphic architectures. Performance comparisons with the…

In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons and binarized synapses for a single-cycle analog in-memory computing (IMC) architecture. First, an analog…

Analog crossbar arrays consisting of emerging memory devices can greatly alleviate the computational strain required by vector matrix multiplications for neural network applications. The ability to produce spin orbit torque-magnetic…

In this paper, we develop an in-memory analog computing (IMAC) architecture realizing both synaptic behavior and activation functions within non-volatile memory arrays. Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)…

Herein, a bit-wise Convolutional Neural Network (CNN) in-memory accelerator is implemented using Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) computational sub-arrays. It utilizes a novel AND-Accumulation method capable of…

In-memory computing (IMC) is an effectual solution for energy-efficient artificial intelligence applications. Analog IMC amortizes the power consumption of multiple sensing amplifiers with analog-to-digital converter (ADC), and…

The application of Magnetic Random-Access Memory (MRAM) in computing-in-memory (CIM) has gained significant attention. However, existing designs often suffer from high energy consumption due to their reliance on complex analog circuits for…

Emerging resistive-crossbar memory (RCM) technology can be promising for computationally-expensive analog pattern-matching tasks. However, the use of CMOS analog-circuits with RCM would result in large power-consumption and poor…

Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like…

We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications. The in-plane magnetized SOT (i-SOT) MRAM not only enables…

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…

Analog In-memory Computing (IMC) has demonstrated energy-efficient and low latency implementation of convolution and fully-connected layers in deep neural networks (DNN) by using physics for computing in parallel resistive memory arrays.…

The computing wall and data movement challenges of deep neural networks (DNNs) have exposed the limitations of conventional CMOS-based DNN accelerators. Furthermore, the deep structure and large model size will make DNNs prohibitive to…

Activation functions are widely used in neural networks to decide the activation value of the neural unit based upon linear combinations of the weighted inputs. The effective implementation of activation function is highly important, as…

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…

Conventional in-memory computing (IMC) architectures consist of analog memristive crossbars to accelerate matrix-vector multiplication (MVM), and digital functional units to realize nonlinear vector (NLV) operations in deep neural networks…

The excellent performance of modern deep neural networks (DNNs) comes at an often prohibitive training cost, limiting the rapid development of DNN innovations and raising various environmental concerns. To reduce the dominant data movement…

The superior density of passive analog-grade memristive crossbars may enable storing large synaptic weight matrices directly on specialized neuromorphic chips, thus avoiding costly off-chip communication. To ensure efficient use of such…

A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step…

In neuromorphic photonic systems, device operations are typically governed by analog signals, necessitating digital-to-analog converters (DAC) and analog-to-digital converters (ADC). However, data movement between memory and these…