Related papers: Low-Power Silicon Strain Sensor Based on CMOS Curr…
For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e.…
We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…
The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…
High-precision sensors are of fundamental importance in modern society and technology.Although numerous sensors have been developed, obtaining sensors with higher levels of sensitivity and stronger robustness has always been expected. Here,…
The current-voltage characteristics of a porous superconductor Bi2Sr2Ca2Cu3Ox (Bi2223) have been measured at temperature range from 10 to 90 K. The experimental dependences have been analyzed within the model allowing for pinning by…
We report magnetic field dependent magnetization and microwave impedance measurements on a MgB2 superconductor prepared by high pressure synthesis. We find that the upper critical field is linearly dependent on temperature near Tc and the…
Beta-tin has been used widely as an interconnect in modern electronics. To improve the understanding of the reliability of these components, we directly measure the critical resolved shear stress of individual slip systems in beta-tin using…
The concept of nonlinear kinetic inductance sensor (NKIS) of electromagnetic radiation is proposed. The idea is based on divergency of kinetic inductance $L_k \sim dq/dI$ ($\hbar q$ is a momentum of superconducting electrons, $I$ is a…
It has been recently demonstrated that superconducting transition edge sensors (TESs) behave as weak-links due to longitudinally induced superconductivity from the leads with higher Tc. In this work we study the implication of this…
We present a new method for torque magnetometry by using a commercially available membrane-type surface-stress sensor (MSS). This sensor has a silicon membrane supported by four beams in which piezoresistive paths are integrated. Although…
Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain…
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities…
We report the design and construction of piezoelectric-based apparatus for applying continuously tuneable compressive and tensile strains to test samples. It can be used across a wide temperature range, including cryogenic temperatures. The…
A suspended system for measuring the thermal properties of membranes is presented. The sensitive thermal measurement is based on the 3$\omega$ dynamic method coupled to a V$\ddot{o}$lklein geometry. The device obtained using micro-machining…
High-quality polycrystalline samples of LaO0.5F0.5BiS2 were obtained using high-pressure synthesis technique. The LaO0.5F0.5BiS2 sample prepared by heating at 700 C under 2 GPa showed superconductivity with superconducting transition…
Topological insulators provide a new platform for spintronics due to the spin texture of the surface states that are topologically robust against elastic backscattering. Here, we report on an investigation of the measured voltage obtained…
The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of…
A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of…
This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18{\mu}m CMOS technology at liquid helium temperature (LHT). First, the…
Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing…