Related papers: Low-Power Silicon Strain Sensor Based on CMOS Curr…
We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on…
We present the electro-thermal characterization of transition-edge sensor (TES) detectors suspended on Si membranes fabricated using a silicon-on-insulator (SOI) wafer. The use of an all-silicon fabrication platform, in contrast to the more…
The Two Photon Absorption - Transient Current Technique (TPA-TCT) was used to investigate a silicon strip detector with illumination from the top. Measurement and analysis techniques for the TPA-TCT of segmented devices are presented and…
The main purpose of this work was to design, develop and construct a simple, low-cost AC susceptometer to measure large, bulk superconducting samples (up to 32 mm in diameter) in the temperature range 78-120 K. The design incorporates a…
A novel power-efficient analog buffer at liquid helium temperature is proposed. The proposed circuit is based on an input stage consisting of two complementary differential pairs to achieve rail-to-rail level tracking. Results of simulation…
We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new…
Semiconducting piezoelectric materials have attracted considerable interest due to their central role in the emerging field of piezotronics, where the development of a piezo-potential in response to stress or strain can be used to tune the…
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…
The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…
This paper is devoted to the temperature dependence of the resistivity in Si- MOS samples over the wide range of densities in the ``metallic phase'' (n>n_c) but not too close to the critical density n_c. Three domains of different behavior…
Resistance thermometry provides a time-tested method for taking temperature measurements that has been painstakingly developed over the last century. However, fundamental limits to resistance-based approaches along with a desire to reduce…
Gate patterning on semiconductors is routinely used to electrostatically restrict electron movement into reduced dimensions. At cryogenic temperatures, where most studies are carried out, differential thermal contraction between the…
We report a systematic study on the effect of sintering temperature on the structural and superconducting properties of nominal SmO0.8F0.2FeAs fabricated by simple one-step solid state reaction method. A detailed correlation between the…
A single-contact voltage sensor designed for accurate measurements of ac voltages across a pair of conductors is described. The sensor design is motivated by remote monitoring applications where accurate voltage measurement of high-voltage…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
We have constructed a microwave detector based on the voltage switching of an underdamped Josephson junction, that is positioned at a current antinode of a {\lambda}/4 coplanar waveguide resonator. By measuring the switching current and the…
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…
Temperature coefficient of resistance (TCR) of a bolometer can be tuned by modifying the thermal conductance of an absorbing materials since they sense radiations via the temperature change in the absorber. However, the thermal conductance…
Transition-edge sensors (TESs) are sensitive devices for detecting photons from millimeter radiation to gamma rays. Their photon counting efficiency and collecting area benefit from large-array multiplexing scheme, and therefore the…
We present the performances and the strain sensitivity of the first spherical gravitational wave detector equipped with a capacitive transducer and read out by a low noise two-stage SQUID amplifier and operated at a temperature of 5 K. We…