Related papers: Low-Power Silicon Strain Sensor Based on CMOS Curr…
Electrical resistivity measurements on La$_{1-x}$Sm$_{x}$O$_{0.5}$F$_{0.5}$BiS$_{2}$ ($x$ = 0.1, 0.3, 0.6, 0.8) have been performed under applied pressures up to 2.6 GPa from 2 K to room temperature. The superconducting transition…
A high-sensitivity wireless pressure sensor with active processing structure designed on the dielectric substrate has been present and evaluated in this paper. The sensor configuration has been optimized by computer-aided design to achieve…
The availability of compact, low-cost magnetic resonance imaging instruments would further broaden the substantial impact of this technology. We report highly sensitive detection of magnetic resonance using low-stress silicon nitride…
Electrical transport measurements were made on single-crystal Sn nanowires to understand the intrinsic dissipation mechanisms of a one-dimensional superconductor. While the resistance of wires of diameter larger than 70 nm drops…
The study of the high strain rate mechanical behaviour of materials using micropillar compression tests has been hindered so far due to the lack of suitable instrumentation. In the present study, a novel high strain rate micropillar…
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on…
We describe magnetic field sensor based on spin wave interferometer. Its sensing element consists of a magnetic cross junction with four micro-antennas fabricated at the edges. Two of these antennas are used for spin wave excitation and two…
The patterned design of flexible sensors enables customized performance to meet diverse application demands. However, when multiple geometric parameters and sensing metrics are involved, experimental approaches to establish…
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and…
Elastoresistivity, the relation between resistivity and strain, can elucidate subtle properties of the electronic structure of a material and is an increasingly important tool for the study of strongly correlated materials. To date,…
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with…
A thermal flow sensor has been realised consisting of freely-suspended silicon-rich silicon-nitride microchannels with an integrated Al/poly-Si++ thermopile in combination with up- and downstream Al heater resistors. The inherently zero…
A new neutron detection concept is presented that is based on superconductive niobium (Nb) strips coated by a boron (B) layer. The working principle of the detector relies on the nuclear reaction 10B+n $\rightarrow$ $\alpha$+ 7Li , with…
Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the…
We report the discovery of a low-temperature phase transition in Bi_2Sr_2Ca(Ni_xCu_{1-x})_20_8 high temperature superconductor. This transition manifests itself as a sharp reduction of the thermal conductivity of the samples at a…
We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky…
This communication deals with a theoretical study of the hot spot onset (HSO) in cellular bipolar power transistors. This well-known phenomenon consists of a current crowding within few cells occurring for high power conditions, which…
We have developed an experimental setup to simultaneously acquire magneto-transmission spectra and measure the photoconductive response. The low-temperature ($T$=4.2 K) magneto-transmission data for weakly doped InSb in the frequency range…
We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single…
Characteristics of high sensitivity MEMS pressure sensor chip for 10 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on…