Related papers: Low-Power Silicon Strain Sensor Based on CMOS Curr…
Dedicated read-out electronics was developed for low impedance resistive thermometers. Using this high performance temperature controller, the temperature dependence of the excess noise of a YBa2Cu307-d (YBCO) sample in the superconducting…
Monolithic stitched CMOS sensors are explored for the upgrade of Inner Tracking System of the ALICE experiment (ITS3) and the R&D of the CERN Experimental Physics Department. To learn about stitching, two 26 cm long stitched sensors, the…
Different terrestrial terahertz applications would benefit from large-format arrays, operating in compact and inexpensive cryocoolers at liquid helium temperature with sensitivity, limited by the 300-K background radiation only. A…
Ultra-sensitive short-wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS-compatible silicon technological platform has been challenging due to…
In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…
Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such…
Recently, great progress has been made in the field of ultrasensitive microwave detectors, reaching even the threshold for utilization in circuit quantum electrodynamics. However, cryogenic sensors lack the compatibility with broad-band…
Silicon Carbide is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance in SiC has been widely studied for…
This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce sensor offset voltage to values in the range of 20 nV, which…
A fundamental road block for all-optical information processing is the difficulty in realizing a silicon optical transistor with the ability to provide optical gain, input output isolation and buffer action. In this work, we demonstrate an…
This paper presents a novel six-axis force/torque (F/T) sensor based on inductive sensing technology. Unlike conventional strain gauge-based sensors that require direct contact and external amplification, the proposed sensor utilizes…
Piezoresistivity is the most commonly used sensing principle in cement-based smart composites for strain-monitoring applications. Nonetheless, the need for external electric power to conduct electrical resistivity measurements restricts the…
With the decreasing sizes of integrated-circuit components, the semiconductor industry is in growing need of high-throughput strain mapping techniques that offer high precision and spatial resolution, with desired industry goals of…
This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes.…
With the advances in low dimensional transition metal dichalcolgenides (TMDCs) based metal oxide semiconductor field effect transistor (MOSFET), the interface between semiconductors and dielectrics has received considerable attention due to…
Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with very high spatial resolution.…
A biaxial tensile device for the transport study of layered materials is described. The device is mounted on the standard 24 pin zero force connector and can be moved between various setups. The compact design of the device makes it…
For traditional capacitive pressure sensors, high nonlinearity and poor sensitivity greatly limited their sensing applications. Hence, an innovative design of capacitors based on spiral comb electrodes is proposed for high-sensitivity…
By integrating a dielectric microwave resonator with a piezoelectric-based strain device, we develop an in situ strain-tunable microwave spectroscopy technique that enables contactless measurements of superconducting properties under…
The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. We demonstrate a room-temperature, highly sensitive, selective, and…