Related papers: Low-Power Silicon Strain Sensor Based on CMOS Curr…
Low-power a.c. generators of square-wave or sinusoidal signals can be used in combination with impedimetric sensors to detect stimuli on the basis of the voltage drop taking place at the sensor electrodes. When a.c. generators with a power…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
Addressing the temperature and strain induced cross-talks simultaneously, we propose an inherently strain and temperature insensitive fiber-optic bio-sensor. The insensitivity has been achieved by properly adjusting the dopants and their…
A high-sensitivity thermal sensing is demonstrated by coating a layer of polydimethylsiloxane (PDMS) on the surface of a silica toroidal microresonator on a silicon wafer. Possessing high-Q whispering gallery modes (WGMs), the PDMS-coated…
This paper deals with the design of MEMS using piezoresistivity as transduction principle. It is demonstrated that when the sensor topology doesn't allow a perfect matching of strain gauges, the resolution is limited by the ability of the…
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon…
We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS$_{2}$ via the deposition of stressed thin films to encapsulate exfoliated flakes. With this technique we can…
The Forward Silicon Tracker (FST) is a pivotal component of the forward upgrade of the Solenoidal Tracker at RHIC (STAR), designed to discern hadron charge signs with a momentum resolution better than 30% for $0.2 < p_T < 2$ GeV/c in the…
A new method to measure the superconducting stiffness tensor $\overline{\rho}_s$, without subjecting the sample to magnetic field, is applied to La$_{1.875}$Sr$_{0.125}$CuO$_4$ (LSCO). The method is based on the London equation…
We describe the design and performance of a series of fast, precise current sensing noise thermometers. The thermometers have been fabricated with a range of resistances from 1.290 $\Omega$ down to 0.2 m$\mathrm{\Omega}$. This results in…
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also…
A micro-pressure sensor with an isosceles trapezoidal beam-membrane (ITBM) is proposed in this paper, consisting of a square silicon membrane, four isosceles trapezoidal beams and four piezoresistors.To investigate how the elastic silicon…
A detailed investigation of the temperature dependence of the spatial string tension $\sigma_s$ in $SU(2)$ gauge theory is presented. A sustained performance of 3~GFLOPS on a 64K Connection Machine CM-2 equivalent has been achieved. Scaling…
We report on the design, production, and testing of advanced double-sided silicon strip detectors under development at the Max-Planck-Institute as part of the Medium Energy Gamma-ray Astronomy (MEGA) project. The detectors are designed to…
This paper presents development and characterization of a 3.2 Gb/s serial link transmitter for CMOS image sensors. The transmitter incorporates Reed-Solomon code to achieve low error rate in the harsh environment of subatomic physics…
Single-chip CMOS-based biosensors that feature microcantilevers as transducer elements are presented. The cantilevers are functionalized for the capturing of specific analytes, e.g., proteins or DNA. The binding of the analyte changes the…
Silicon microstrip detectors are widely used in experiments for space astronomy. Before the detector is assembled, extensive characterization of the silicon microstrip sensors is indispensable and challenging. This work electrically…
This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and…
We report on the status and development of polarization-sensitive detectors for millimeter-wave applications. The detectors are fabricated on single-crystal silicon, which functions as a low-loss dielectric substrate for the microwave…
Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systematic study of the impact of strain on off-state leakage…