Related papers: Low-Power Silicon Strain Sensor Based on CMOS Curr…

Strain engineering is one of the most promising and effective routes toward continuously tuning the electronic and optic properties of materials, while thermal properties are generally believed to be insensitive to mechanical strain. In…

The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…

This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is…

We report on the development of an induction based low temperature high frequency ac susceptometer capable of measuring at frequencies up to 3.5 MHz and at temperatures between 2 K and 300 K. Careful balancing of the detection coils and…

Internet-of-Things (IoT) applications require nW-power current references that are robust to process, voltage and temperature (PVT) variations, to maintain the performance of IoT sensor nodes in a wide range of operating conditions.…

A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,…

Superconductor/metal interfaces are usually fabricated in heterostructures that join these dissimilar materials. A conceptually different approach has recently exploited the strain sensitivity of heavy-fermion superconductors, selectively…

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m…

A wide swing charge sensitive amplifier (CSA) has been developed, as a part of a front-end electronics (FEE) readout ASIC, for a prototype silicon tungsten (Si-W) based electromagnetic (EM) calorimeter. The CSA, designed in 0.35 $\mu$m…

Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator…

We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically…

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider…

Using calculations from first principles based on density functional theory we have studied the strain sensitivity of the high-field superconducting magnet A15 Nb3Sn. The Nb3Sn lattice cell was deformed in the same way as observed…

In this paper we present a simple and efficient built-in temperature sensor for thermal monitoring of standard-cell based VLSI circuits. The proposed smart temperature sensor uses a ring-oscillator composed of complex gates instead of…

Characterizing critical current IC of Nb3Sn strands as function of a strain is very important for large high field superconducting magnet applications such as the superconducting outsert coil of the series-connected hybrid at the NHMFL and…

Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric…

Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes.…

The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…

Resistance thermometry is a time-tested method for taking temperature measurements. In recent years fundamental limits to resistance-based approaches spurred considerable interest in developing photonic temperature sensors as a viable…

For the Inner Tracking System 3 (ITS3) upgrade, the ALICE experiment at CERN requires monolithic active pixel sensors of dimensions up to 97~mm$\,\times\,$266~mm, occupying a large fraction of a 300 mm wafer. To manufacture such a…