Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Felix Carrascoso; Hao Li; Riccardo Frisenda; Andres Castellanos-Gomez

doi:10.1007/s12274-020-2918-2

Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Materials Science 2021-05-11 v1 Mesoscale and Nanoscale Physics Applied Physics

Authors: Felix Carrascoso , Hao Li , Riccardo Frisenda , Andres Castellanos-Gomez

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Abstract

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.

Keywords

strain engineering transition metal dichalcogenides mos2 mose2 ws2 wse2 reflectance spectroscopy uniaxial strain

Cite

@article{arxiv.2006.06660,
  title  = {Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2},
  author = {Felix Carrascoso and Hao Li and Riccardo Frisenda and Andres Castellanos-Gomez},
  journal= {arXiv preprint arXiv:2006.06660},
  year   = {2021}
}

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4 main text figures, 5 tables, 18 figures in the supporting information

Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Abstract

Keywords

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