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We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
Physically accurate and mathematically tractable models are presented to characterize scattering and reflection properties of reconfigurable intelligent surfaces (RISs). We take continuous and discrete strategies to model a single patch and…
The reliability of any day-to-day material is critically dictated by its properties. One factor which governs the behaviour of a material, under a given condition, is the microstructure. Despite the absence of any phase transformation, a…
To meet the growing demand for high data rates, cellular systems are expected to evolve towards higher carrier frequencies and larger antenna arrays, but conventional phased arrays face challenges in supporting such a prospection due to…
Neural Radiance Fields (NeRF) have demonstrated impressive performance in novel view synthesis. However, NeRF and most of its variants still rely on traditional complex pipelines to provide extrinsic and intrinsic camera parameters, such as…
The mechanosensitivity of cells, which determines how they are able to respond to mechanical signals received from their environment, is crucial for the functioning of all biological systems. In experiments, cells placed on cyclically…
The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and…
Resistive random access memory (ReRAM) is a promising technology that can perform low-cost and in-situ matrix-vector multiplication (MVM) in analog domain. Scientific computing requires high-precision floating-point (FP) processing.…
The effects of a radiation field (RF) on the unstable modes developed in relativistic electron beam--plasma interaction are investigated assuming that $\omega_{0} >\omega_{p}$, where $\omega_{0}$ is the frequency of the RF and $\omega_{p}$…
Data-driven modeling approaches such as jump tables are promising techniques to model populations of resistive random-access memory (ReRAM) or other emerging memory devices for hardware neural network simulations. As these tables rely on…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…
The memory consistency model is a fundamental system property characterizing a multiprocessor. The relative merits of strict versus relaxed memory models have been widely debated in terms of their impact on performance, hardware complexity…
We analyse the behaviour of the linear phase of the Rayleigh-Taylor instability (RTI) in the presence of a foam. Such a problem may be relevant, for example, to some inertial confinement fusion (ICF) scenarios such as foams within the…
Electrostatically actuated nanotubes and nanowires have many promising applications as nano-switches, ultra sensitive sensors and signal processing elements. These devices can be modelled as slender beams with circular cross-section. In…
Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
The goal of this thesis is to gain new insights into the drift phenomenon and identify strategies to mitigate it. An extensive experimental characterization of PCM devices and in particular drift forms the foundation of each chapter. With…
It has been recently observed that synthetic materials subjected to an external elastic stress give rise to scaling phenomena in the acoustic emission signal. Motivated by this experimental finding we develop a mesoscopic model in order to…
Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…