Related papers: Factors that control stability, variability, and r…
Electrical measurements of ferroelectric switching kinetics are widely used to probe the dynamics of polarization reversal, yet the influence of the measurement circuit is often underappreciated. In this paper, we show that the interplay…
This paper presents the stability analysis of a system composed of rotating beams on a flexible, circular fixed ring, using the Routh-Hurwitz criterion. The model displayed has been fully developed within the rotating frame by use of an…
Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of…
We introduce an approximate mapping between the random fuse network (RFN) and a random field dipolar Ising model (RFDIM). The state of the network damage is associated with a metastable spin configuration. A mean-field treatment, numerical…
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…
Resistive random access memories (ReRAMs) with a bilayer TaOx/HfO2 stack structure have shown unique multi-level resistive switching capabilities. However, the physical processes governing their behavior, and specifically the atomistic…
The dynamics of complex reactive schemes is known to deviate from the Mean Field (MF) theory when restricted on low dimensional spatial supports. This failure has been attributed to the limited number of species-neighbours which are…
The demand for accurate information about the internal structure and characteristics of dynamic random-access memory (DRAM) has been on the rise. Recent studies have explored the structure and characteristics of DRAM to improve processing…
Typical reconfigurable intelligent surface (RIS) implementations include metasurfaces with almost passive unit elements capable of reflecting their incident waves in controllable ways, enhancing wireless communications in a cost-effective…
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate…
Physically Unclonable Functions (PUFs) are a promising solution for identity verification and asymmetric encryption. In this paper, a new Resistive Random Access Memory (ReRAM) PUF-based protocol is presented to create a physical ReRAM PUF…
The radiative instability of the relativistic electron beam in a periodic dielectric-filled cylindrical waveguide is considered. The dependence of the beam instability increment on the radiated wave frequency near the region of dispersion…
In this work we introduce a compact model for mushroom-type phase-change memory devices that incorporates the shape and size of the amorphous mark under different programming conditions, and is applicable to both projecting and…
In this paper, we study the performance of wireless communications empowered by Reconfigurable Intelligent Surface (RISs) over Nakagami-m fading channels. We consider two phase configuration designs for the RIS, one random and another one…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is…
This paper focuses on the study of the Filament Based Lamellipodium Model (FBLM) and the corresponding Finite Element Method (FEM) from a numerical point of view. We study fundamental numerical properties of the FEM and justify the further…
Conductions fluctuations (CF) are studied in single layer graphene devices with superconducting source and drain contacts made from aluminium. The CF are found to be enhanced by superconductivity by a factor of 1.4 to 2. This (near)…
Resistive random-access memory (ReRAM)-based processing-in-memory (PIM) architecture is an attractive solution for training Graph Neural Networks (GNNs) on edge platforms. However, the immature fabrication process and limited write…
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we…