Related papers: Factors that control stability, variability, and r…
We investigate the AC conductivity of binary random impedance networks, with emphasis on its dependence on the ratio of the complex conductances of both phases. We propose an algorithm to determine the conductance of a finite network, in…
Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance…
This paper investigates voltage stability in inverter-based power systems concerning fold and saddle-node bifurcations. An analytical expression is derived for the sensitivity of the stability margin using the normal vector to the…
All-solid-state batteries fail not only by bulk transport limits, but by a reactive interface that evolves during cycling. We show that degradation is governed by two coupled processes: interfacial breathing, the cycle-scale oscillation of…
Memristive systems, namely resistive systems with memory, are attracting considerable attention due to their ubiquity in several phenomena and technological applications. Here, we show that even the simplest one-dimensional network formed…
Stability of ultra-low-voltage SRAM bitcells in retention mode is threatened by two types of uncertainty: process variability and intrinsic noise. While variability dominates the failure probability, noise-induced bit flips in weakened…
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However,…
In this paper, we consider the optimal control of material micro-structures. Such material micro-structures are modeled by the so-called phase field model. We study the underlying physical structure of the model and propose a data based…
In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…
Reset elements are nonlinear filters that improve control performance beyond linear time-invariant (LTI) limits but introduce higher-order harmonics that complicate design. Although frequency-domain tools like describing functions (DFs) and…
After an initial transient period, the conduction regime in a 1D superconducting wire that carries a fixed current is either normal or periodic or stationary. The phase diagram for these possibilities was studied in Phys. Rev. Lett. {\bf…
Dedicated hardware implementations of spiking neural networks that combine the advantages of mixed-signal neuromorphic circuits with those of emerging memory technologies have the potential of enabling ultra-low power pervasive sensory…
A unique set of characteristics are packed in emerging nonvolatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) such as their underlying stochastic switching processes alongside their intrinsic highly nonlinear…
Recent years have seen the emergence of programmable metasurfaces, where the user can modify the EM response of the device via software. Adding reconfigurability to the already powerful EM capabilities of metasurfaces opens the door to…
We show how the recurrence phenomenon characteristic of the nonlinear stage of induced modulational instability in a passive fiber is affected by forcing. An additional linear amplification, even if extremely weak, induces separatrix…
Residual stress and plastic strain in additive manufactured materials can exhibit significant microscopic variation at the powder scale, profoundly influencing the overall properties of printed components. This variation depends on…
Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from…
Currently, memristor devices suffer from variability between devices and from cycle to cycle. In this work, we study the impact of device variations on memristive Material Implication (IMPLY). New constraints for different parameters and…
Recently, the Edge Computing paradigm has gained significant popularity both in industry and academia. Researchers now increasingly target to improve performance and reduce energy consumption of such devices. Some recent efforts focus on…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…