Related papers: Factors that control stability, variability, and r…
While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis).…
We describe a new class of systems exhibiting return point memory (RPM) that are different from those discussed before in the context of ferromagnets. We show numerically that one dimensional random Ising antiferromagnets have RPM, when…
The reflection characteristics of a reconfigurable intelligent surface (RIS) depend on the phase response of the constituent unit cells, which is necessarily frequency dependent. This paper investigates the role of an RIS constituting unit…
Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This…
Brain-inspired computing proposes a set of algorithmic principles that hold promise for advancing artificial intelligence. They endow systems with self learning capabilities, efficient energy usage, and high storage capacity. A core concept…
Large-scale ranking systems depend on thousands of features derived from user behavior across multiple time horizons. Typically requires model retraining -- resulting in long iteration cycles (3--6 months), substantial GPU resource…
In this paper, we study the inference accuracy of the Resistive Random Access Memory (ReRAM) neuromorphic circuit due to stuck-at faults (stuck-on, stuck-off, and stuck at a certain resistive value). A simulation framework using Python is…
A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film…
The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…
RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
Effects of periodic curvature on the the electrical resistivity of corrugated semiconductor films are theoretically considered. The presence of a curvature-induced potential affects the motion of electrons confined to the thin curved film,…
Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…
Experimental results from a 65 nm CMOS commercial technology SRAM test chip reveal a linear correlation between a new electrical parameter -- the word-line voltage margin (VWLVM) -- and the measured circuit alpha-SER. Additional experiments…
Cells and tissues exhibit oscillatory deformations during remodelling, migration or embryogenesis. Although it has been shown that these oscillations correlate with cell biochemical signalling, it is yet unclear the role of these…
The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of…
Metasurfaces, the two-dimensional counterpart of metamaterials, have caught great attention thanks to their powerful control over electromagnetic waves. Recent times have seen the emergence of a variety of metasurfaces exhibiting not only…
We study the phase distribution of the complex reflection coefficient in different configurations as a disordered 1D system evolves in length, and its effect on the distribution of the 4-probe resistance $R_4$. The stationary ($L \to…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…