Related papers: CMOS pixel sensors optimized for large ionizing dy…

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…

Dense tracking environments in experiments at CERN's High-Luminosity LHC and future FCC experiments call for an increased use of timing information in addition to the position measurement of pixel detectors. This adds one dimension to the…

The Super Tau-Charm Facility (STCF) is a proposed $e^+e^-$ collider with a peak luminosity 100 times higher than that of the present tau-charm factory. The inner tracker (ITK) of STCF should feature a low material budget and high readout…

This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they…

Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R\&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow…

CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate…

CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called…

Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…

Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and…

Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE…

This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve…

MiniCACTUS-v2 is a monolithic sensor prototype designed in LF 150 nm CMOS process for time tagging of individual Minimum Ionizing Particles with an accuracy better than 100 ps. The sensing element is a deep n-well/p-substrate diode without…

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation…

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies…

The International Linear Collider (ILC) is a project of an electron-positron (e+e-) linear collider with the centre-of-mass energy of 200-500 GeV. Monolithic Active Pixel Sensors (MAPS) are one of the proposed silicon pixel detector…

CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\mu$m) in which charge is collected on an electrode, albeit by disordered and slow…