Related papers: On Injection in Intrinsic Single-Carrier Devices
We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including…
A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g.,…
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are…
The pressure dependence, up to 11.3 kbar, of basic parameters of the superconducting state, such as the critical temperature (Tc), the lower and the upper critical fields, the coherence length, the penetration depth, and their anisotropy,…
The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements…
A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge…
We use computational simulations to study the electron emission and propagation in planar vacuum diodes. We show how space-charge affects thermionic emission from cathodes with two different values of work function that form a checkerboard…
Charge carrier recombination in the perovskite solar cells (PSCs) has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts…
The fabrication of single-carrier organic diodes from a series of sixteen molecular materials is reported. We experimentally demonstrate how the molecular structure affects the film morphology, and how the film morphology influences the…
Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations,…
Inserting molecular monolayers within metal / semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as…
The enhancement of power conversion efficiency beyond the theoretical limit of single-junction solar cells is a key objective in the advancement of hot carrier solar cells. Recent findings indicate that quantum wells (QWs) can effectively…
Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and…
A critical requirement for high gain and low noise avalanche photodiodes is the single-carrier avalanche multiplication. We propose that the single-carrier avalanche multiplication can be achieved in materials with a limited width of the…
Undesired unintentional doping and doping limits in semiconductors are typically caused by compensating defects with low formation energies. Since the formation energy of a charged defect depends linearly on the Fermi level, doping limits…
Charge transport properties in organic semiconductors are determined by two kinds of microscopic disorders, namely energetic disorder related to the distribution of localized states and the spatial disorder related to the morphological…
The absolute values and temperature, T, dependence of the in-plane magnetic penetration depth, $\lambda_{ab}$, of La_{2-x}Sr_xCuO_4 and HgBa_2CuO_{4+\delta} have been measured as a function of carrier concentration. We find that the…
Effect of static charges on charge carrier transport in disordered organic materials is considered. Long range nature of Coulomb interaction requires to take into consideration a finite thickness of the transport layer. Presence of…