Charge Crowding in Graphene-Silicon Diodes
Abstract
The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge transport effects at the 2D-3D ohmic contact coupled with the thermionic injection model for graphene/Si Schottky junction. Here, w e focus on the intrinsic properties of graphene-metal contacts, paying particular attention to the nature of the contact failure mechanism under high electrical stress. According to our findings, severe current crowding (CC) effects in highly conductive electrical contact significantly affect device failure that can be reduced by spatially varying the contact properties and geometry. The impact of electrical breakdown on material degradation is systematically analyzed by atomic force, Raman, scanning electron, and energy dispersive X-ray spectroscopies. Our devices withstand high electrostatic discharge spikes over a longer period, manifesting high robustness and operational stability. This research paves the way towards a highly robust and reliable graphene/Si heterostructure in futuristic on-chip integration in dynamic switching. The methods we employed here can be extended for other nanoscale electronic devices based on 2D-3D interfaces
Cite
@article{arxiv.2211.03971,
title = {Charge Crowding in Graphene-Silicon Diodes},
author = {Muhammad Abid Anwar and Munir Ali and Dong Pu and Srikrishna Chanakya Bodepudi and Xinyu Zhu and Xin Pan and Jianhang Lv and Khurram Shehzad and Xiaochen Wang and Ali Imran and Yuda Zhao and Shurong Dong and Yang Xu and Bin Yu and Huan Hu},
journal= {arXiv preprint arXiv:2211.03971},
year = {2022}
}