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Related papers: On Injection in Intrinsic Single-Carrier Devices

200 papers

The classical Shockley boundary conditions are used for the determination of the minority carrier concentrations at the edges of the space-charge region of semiconductor p-n junctions. They are usually employed for the calculation of the…

Materials Science · Physics 2007-05-23 Miron J. Cristea

We discuss some of the basic theoretical aspects of current-carrying states in superconducting superlattices with tunnel barriers in the mesoscopic regime, when the superconducting layer thickness is small compared to the BCS coherence…

Condensed Matter · Physics 2009-10-31 S. V. Kuplevakhsky , A. V. Naduev , S. V. Naydenov

The phenomenological boundary conditions for the envelope wave function, which is applicable for contacts of semiconductors with the rather different crystal symmetry are proposed. It is shown that the boundary conditions are determined by…

Materials Science · Physics 2008-02-03 Leonid S. Braginsky

Anisotropic charge carrier transport in black phosphorus limited by ionized impurity scattering at finite temperature is explored theoretically. The anisotropic electronic structure enters the calculation for the polarizability (screening),…

Mesoscale and Nanoscale Physics · Physics 2017-05-03 Yue Liu , P. Paul Ruden

Charged colloidal monolayers at the interface between water and air (or oil) are used in a large number of chemical, physical and biological applications. Although a considerable experimental and theoretical effort has been devoted in the…

Soft Condensed Matter · Physics 2018-12-03 Aviv Karnieli , Tomer Markovich , David Andelman

We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $\delta$-layer of Mn, where the charge carriers are confined within a quantum well and…

Mesoscale and Nanoscale Physics · Physics 2013-05-29 Vikram Tripathi , Kusum Dhochak , B. A. Aronzon , V. V. Rylkov , A. B. Davydov , Bertrand Raquet , Michel Goiran , K. I. Kugel

Carrier conduction in wide bandgap semiconductors (WBS) often exhibits velocity saturation at the high-electric field regime. How such effect influences the transition between contact-limited and space-charge-limited current in a…

Applied Physics · Physics 2023-08-03 Kok Wai Lee , Yee Sin Ang

A measurement of the Casimir force between a gold coated sphere and two Si plates of different carrier densities is performed using a high vacuum based atomic force microscope. The results are compared with the Lifshitz theory and good…

Quantum Physics · Physics 2009-11-13 F. Chen , G. L. Klimchitskaya , V. M. Mostepanenko , U. Mohideen

A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states…

Materials Science · Physics 2015-05-27 S. V. Yampolskii , Yu. A. Genenko , c. Melzer , H. von Seggern

In this literature review we investigate the permittivity, density-of-state mass, band gap, impact ionization, charge carrier recombination, incomplete ionization and mobility in 4H silicon carbide. We provide a comprehensive overview over…

Materials Science · Physics 2025-12-22 Jürgen Burin , Philipp Gaggl , Simon Waid , Andreas Gsponer , Thomas Bergauer

Grain boundaries (GB) profoundly influence the electrical properties of polycrystalline ionic solids. Yet, precise control of their transport characteristics has remained elusive, thereby limiting the performance of solid-state…

To reduce the impact of charging effects on satellites, cheap and lightweight conductive coatings are desirable. We mimic space-like charging environments in ultra-high vacuum (UHV) chambers during deposition of charges via the electron…

Mesoscale and Nanoscale Physics · Physics 2023-09-06 M. Wendt , R. Lange , F. Dorn , J. Berdermann , I. Barke , S. Speller

Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying…

Resistance of vacuum deposited ${\rm Sb_2Te_3}$ films of thickness between 100-500nm has been measured in vacuum. It is found that the resistance of the polycrystalline films strongly depends on the grain size and inter-granular voids. The…

Materials Science · Physics 2007-05-23 P. Arun , A. G. Vedeshwar

In most electronic devices, electric current of both types (electrons and holes) flows through a junction. Usually the boundary conditions have been formulated exclusively for open circuit. The boundary conditions proposed here bypass this…

Materials Science · Physics 2009-11-07 O. Yu. Titov , J. Giraldo , Yu. G. Gurevich

Low-frequency current fluctuations are investigated over a bias range covering {\em ohmic}, {\em trap-filling} and {\em space-charge-limited current} regimes in polycrystalline polyacenes. The relative current noise power spectral density…

Disordered Systems and Neural Networks · Physics 2007-05-23 A. Carbone , B. K. Kotowska , D. Kotowski

Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder…

Mesoscale and Nanoscale Physics · Physics 2015-11-18 S. Das Sarma , E. H. Hwang

The subject of space charge in ionization detectors is reviewed, showing how the observations and the formalism used to describe the effects have evolved, starting with applications to calorimeters and reaching recent, large-size time…

Instrumentation and Detectors · Physics 2021-03-05 Sandro Palestini

An electrode contact-related mechanism for the operational instability of organic electronic devices is proposed and confirmed via observation of a water-induced change in charge-injection barrier eights at the…

Applied Physics · Physics 2020-01-28 Ryo Nouchi

The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…