Space-Charge-Limited Current Fluctuations in Organic Semiconductors
Abstract
Low-frequency current fluctuations are investigated over a bias range covering {\em ohmic}, {\em trap-filling} and {\em space-charge-limited current} regimes in polycrystalline polyacenes. The relative current noise power spectral density is constant in the {\em ohmic} region, steeply increases at the {\em trap-filling transition} region and decreases in the {\em space-charge-limited-current} region. The {\em noise peak} at the {\em trap-filling transition} is accounted for within a {\em continuum percolation model}. As the quasi-Fermi level crosses the trap level, intricate insulating paths nucleate within the ohmic matrix, determining the onset of non-equilibrium conditions at the interface between the insulating and conducting phase. The {\em noise peak} is written in terms of the free and trapped charge carrier densities.
Keywords
Cite
@article{arxiv.cond-mat/0505533,
title = {Space-Charge-Limited Current Fluctuations in Organic Semiconductors},
author = {A. Carbone and B. K. Kotowska and D. Kotowski},
journal= {arXiv preprint arXiv:cond-mat/0505533},
year = {2007}
}
Comments
corrected proofs