Related papers: Gallium nitride phononic integrated circuits for f…
Guiding and manipulating GHz frequency acoustic waves in $\mu$m-scale waveguides and resonators opens up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling…
We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances.…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
Monolithic integration of multiband (1.4~ 6.0 GHz) RF acoustic devices were successfully demonstrated within the same process flow by using the lithium niobate (LN) thin film on silicon carbide (LNOSiC) substrate. A novel surface mode with…
Thin-film gallium nitride (GaN) as a proven piezoelectric material is a promising platform for the phononic integrated circuits, which hold great potential for scalable information processing processors. Here, an unsuspended traveling…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
The interaction between photons and phonons plays a crucial role in broad areas ranging from optical sources and modulators to quantum transduction and metrology. The performance can be further improved using integrated photonic-phononic…
Microwave-frequency acoustic waves in solids have emerged as a versatile platform for both classical and quantum applications. While phononic integrated devices and circuits are being developed on various material platforms, an ideal…
Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the…
We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction…
Integrated radio-frequency (RF) photonics plays a pivotal role in wireless communications, sensing, and radar due to its large intrinsic bandwidth, remote distribution capability, and compact footprint. However, despite significant advances…
The spectacular success of silicon-based photonic integrated circuits (PICs) in the past decade naturally begs the question of whether similar fabrication procedures can be applied to other material platforms with more desirable optical…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
Guided phonons have become an increasingly important platform for classical and quantum information processing. While conventional surface acoustic wave systems are typically only guided in the vertical direction, two-dimensionally confined…
Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and…