Related papers: Electron g-factor determined for quantum dot circu…
We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is…
Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor…
We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a…
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…
According to a prevailing opinion, the electron g-factor ge = 2 is exclusively a quantum feature. Here we demonstrate it could be explained classically only in relativistic terms. The electron is treated as an extended, continuous, but…
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an…
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise…
We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of…
The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the…
Using a `standard' NMR spin-echo technique we determined the spin polarization of two-dimensional electrons, confined to GaAs quantum wells, from the hyperfine shift of Ga nuclei in the wells. Concentrating on the temperature and magnetic…
The electron g-factor measured in a quantum point contact by source-drain bias spectroscopy is significantly larger than its value in a two-dimensional electron gas. This enhancement, established experimentally in numerous studies, is an…
We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five…
We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field…
We show that for lattice-mismatched zinc-blende-type (110)-grown quantum wells a significant contribution to the zero-magnetic-field spin splitting of electron subbands comes from strain-induced spin-orbit coupling. Combining envelope…
Detailed theoretical study of the magneto-optical properties of weakly confining GaAs/AlGaAs quantum dots is provided. We focus on the diamagnetic coefficient and the $g$-factor of the neutral and the charged excitonic states, respectively,…
We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus…
We determine the effective $g$-factor ($|g^\ast|$) of a two-dimensional electron gas (2DEG) using a new method based on capacitance spectroscopy. The capacitance-voltage profile of a 2DEG in an InAs/AlGaSb quantum well measured in an…
Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman…
In high-quality two-dimensional electrons confined to GaAs quantum wells, near Landau level filling factors $\nu=$ 1/2 and 1/4, we observe signatures of the commensurability of the electron-flux composite fermion cyclotron orbits with a…
The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a…