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We present a fully three-dimensional theoretical study of the extraordinary transmission of light through subwavelength hole arrays in optically thick metal films. Good agreement is obtained with experimental data. An analytical minimal…
Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate.…
Two-dimensional transition metal chalcogenides, with their atomically layered structure, favourable electronic and mechanical properties, and often strong spin-orbit coupling, are ideal systems for fundamental studies and for applications…
We report a method to grow B20 MnGe thin films using molecular-beam epitaxy, which employs an ultrathin CrSi template layer on Si(111). This layer is expected to be nonmagnetic, in contrast to MnSi and FeGe buffer layers that have been used…
Fe3GaTe2 (FGaT), a two-dimensional (2D) layered ferromagnetic metal, exhibits a high Curie temperature (TC) ~ 360 K along with strong perpendicular magnetic anisotropy (PMA), making it a promising material candidate for next-generation…
Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are…
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to…
Layered oxides have been intensively studied due to their high designability for various electronic functions. Here we synthesize a new oxide as epitaxial thin film form by pulsed laser deposition. Film characterizations including…
The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered…
We derive the electromagnetic medium equivalent to a collection of all-dielectric nano-particles (enjoying high refractive indices) distributed locally non-periodically in a smooth domain $\Omega$. Such distributions are used to model well…
(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here,…
Valley-Hall phases, first proposed in two-dimensional (2D) materials, originate from nontrivial topologies around valleys which denote local extrema in momentum space. Since they are extended into classical systems, their designs draw…
Heteroepitaxy conventionally relies on rigid crystalline substrates, implicitly assuming that lattice and thermal mismatch must be accommodated within the epitaxial layer, leading to residual strain and defects that worsen with increasing…
Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The x-ray diffraction pattern of the film prepared with the…
Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are…
Van der Waals (vdW) crystals are prone to twisting, sliding, and buckling due to inherently weak interlayer interactions. While thickness-controlled vdW structures have attracted considerable attention as ultrathin semiconducting channels,…
Spintronic terahertz (THz) emitters have established themselves as among the most practical broadband THz sources available, yet their performance remains fundamentally limited by the spin Hall conductivity of the nonmagnetic conversion…
To fully exploit van der Waals materials and heterostructures, new mass-scalable production routes that are low cost but preserve the high electronic and optical quality of the single crystals are required. Here, we demonstrate an approach…
Interest in magnetic-tunnel junctions has prompted a re-examination of tunneling measurements through thin insulating films. In any study of metal-insulator-metal trilayers, one tries to eliminate the possibility of pinholes (small areas…
We report a method that uses van der Waals interactions to transfer continuous, high-quality graphene films from Ge(110) to a different substrate held by hexagonal boron nitride carriers in a clean, dry environment. The transferred films…