The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit anti-ambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.
@article{arxiv.1412.4304,
title = {Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors},
author = {Deep Jariwala and Vinod K. Sangwan and Jung-Woo Ted Seo and Weichao Xu and Jeremy Smith and Chris H. Kim and Lincoln J. Lauhon and Tobin J. Marks and Mark C. Hersam},
journal= {arXiv preprint arXiv:1412.4304},
year = {2014}
}