Related papers: Mitigation of substrate coupling effects in RF swi…
High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate…
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…
We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate…
We demonstrate a silicon photonic platform using thin buried oxide silicon-on-insulator (SOI) substrates using localized substrate removal. We show high confinement silicon strip waveguides, micro-ring resonators and nanotapers using this…
The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially…
With the evolution of heterogeneous computing system, such as network-on-chip, high-performance distributed computing, accelerator-rich architectures and cluster computing, high-speed, energy-efficient and low-latency interfaces among…
The majority of spatial signal processing techniques focus on increasing the total system capacity and providing high data rates for intended user(s). Unlike the existing studies, this paper introduces a novel interference modulation method…
We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon…
We compare modulator designs on thick-film and thin-film silicon-on-insulator (SOI) substrates based on the carrier-depletion effect. This effect exhibits a lower junction capacitance as compared to its injection counterparts, leading to a…
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform…
This paper reports a novel simulation methodology for analysis and prediction of substrate noise impact on analog / RF circuits taking into account the role of the parasitic resistance of the on-chip interconnect in the impact mechanism.…
Recently the strong demands in wireless communication requires expanding development for the application of RF MEMS (Radio Frequency micro electro mechanical systems) sensing devices such as micro-switches, tunable capacitors because it…
A Silicon-on-insulator (SOI) perfectly vertical fibre-to-chip grating coupler is proposed and designed based on engineered subwavelength structures. The high directionality of the coupler is achieved by implementing step gratings to realize…
We consider large-scale fading precoding (LSFP), which is a two-layer precoding scheme in the downlink of multi-cell massive MIMO (multiple-input multiple-output) systems to suppress inter-cell interference. We obtain the closed-form…
State-of-the-art nanomechanical resonators are heralded as a central component for next-generation clocks, filters, resonant sensors and quantum technologies. To practically build these technologies will require monolithic integration of…
Suspending devices on thin SiN membranes can limit their interaction with the bulk substrate and reduce parasitic capacitance to ground. While suspending devices on membranes is used in many fields including radiation detection using…
Microfabricated surface ion traps are a principle component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive…
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform…
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound…
Through-silicon vias (TSVs) enable dense vertical interconnects in 3D-IC and chiplet systems, but their metal-oxide-silicon structure introduces significant parasitic coupling paths that can degrade the spectral purity of sensitive RF…