Related papers: Voltage-controlled magnetism enabled by resistive …
Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic…
Electrical manipulation of lattice, charge, and spin has been realized respectively by the piezoelectric effect, field-effect transistor, and electric field control of ferromagnetism, bringing about dramatic promotions both in fundamental…
We address the electronically induced anisotropy field acting on a spin moment comprised in a vibrating magnetic molecule located in the junction between ferromagnetic metals. Under weak coupling between the electrons and molecular…
The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles…
A topological modulation of magnetic thin films can induce a magnetic anisotropy of magnetostatic origin. In this letter, we report on the magnetic properties of NiFe layers deposited on wavy shaped Si substrates. Without any modulation,…
Voltage control of magnetic anisotropy (VCMA) induced by charge accumulation is typically considered as an ultrafast process, enabling energy-efficient and high-speed magnetization switching in spintronic devices. In this work, we…
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the…
Anisotropy describes the directional dependence of a material's properties such as transport and optical response. In conventional bulk materials, anisotropy is intrinsically related to the crystal structure, and thus not tunable by the…
A low power magnetization switching scheme based on the voltage control of magnetic anisotropy (VCMA) is proposed. In contrast to the conventional switching scheme using VCMA, where the magnetic anisotropy is eliminated during the voltage…
We analyze atom-surface magnetic interactions on atom chips where the magnetic trapping potentials are produced by current carrying wires made of electrically anisotropic materials. We discuss a theory for time dependent fluctuations of the…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral…
We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of…
An experimental demonstration of a parametric oscillation of a magnetization in a ferromagnet was performed recently by applying a microwave voltage, indicating the potential to be applied in a switching method in non-volatile memories. In…
We report on the controllable pinning of domain walls in stripes with perpendicular magnetic anisotropy by magnetostatic coupling to magnetic vortices in disks located above the stripe. Pinning mechanisms and depinning fields are reported.…
We have measured quantum transport through an individual Fe$_4$ single-molecule magnet embedded in a three-terminal device geometry. The characteristic zero-field splittings of adjacent charge states and their magnetic field evolution are…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…
We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
Several recent experimental studies have confirmed the possibility of switching the magnetization direction in the small magnetic domains by pumping large spin-polarized currents through them. On the basis of equations proposed by…